Related papers: Predicting Intrinsic Antiferromagnetic and Ferroel…
Ferrimagnets take the advantages of both ferromagnets and antiferromagnets making them promise for spintronic applications. Here we prepared ferrimagnetic Mn4N thin films with high Curie temperature and investigated the crystalline…
The magnetocaloric effect in exchange-coupled synthetic-antiferromagnet multilayers is investigated experimentally and theoretically. We observe a temperature-controlled inversion of the effect, where the entropy increases on switching the…
Controllable magnetization in atomically thin two-dimensional magnets is highly desirable for developing spintronics. For FeSe monolayer, its magnetic ground state is not yet fully understood, and the potential in constructing high-speed…
Van der Waals multiferroics have emerged as a promising platform to explore novel magnetoelectric phenomena. Recently, it has been shown that monolayer NiI$_2$ hosts robust type-II multiferroicity down to the two-dimensional limit, a giant…
A material that reveals two or more ferroelectric properties at the same time is called multiferroic materials. The most commonly multiferroic materials shows ferroelectricity and ferromagnetism property within a single phase. Accordingly…
Magnetoelastic and magnetoelectric coupling in the artificial multiferroic heterostructures facilitate valuable features for device applications such as magnetic field sensors and electric write magnetic-read memory devices. In a…
Multiferroic materials have garnered wide interest for their exceptional static and dynamical magnetoelectric properties. In particular, type-II multiferroics exhibit an inversion-symmetry-breaking magnetic order which directly induces a…
Deterministically controllable multi-state polarizations in ferroelectric materials are promising for the application of next-generation non-volatile multi-state memory devices. However, the achievement of multi-state polarizations has been…
A study of the multilayer system MgO/CoFeB(1.1nm)/Ta($t$)/CoFeB(0.8nm)/MgO is presented, where the two CoFeB layers are separated by a Ta interlayer of varying thickness $t$. The magnetization properties deduced from complementary…
Multiferroic (MF) devices based on simultaneous ferroelectric and ferromagnetic phenomena are considered to be promising candidates for future bi-functional micro/nano-electronics. The multiferroic phenomena in two-dimensional materials is…
Electrical tuning of magnetism is crucial for developing fast, compact, ultra-low power electronic devices. Multiferroics offer significant potential due to their ability to control magnetic via an electric field through magnetoelectric…
Multiferroics, which combine ferroelectric and magnetic order, offer a transformative platform for next-generation electronic devices. However, the intrinsic competition between the mechanisms driving ferroelectricity and magnetism in…
Composite multiferroics are materials exhibiting the interplay of ferroelectricity, magnetism, and strong electron correlations. Typical example --- magnetic nano grains embedded in a ferroelectric matrix. Coupling of ferroelectric and…
The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI$_3$ and CrCl$_3$ can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field ($H$) and temperature ($T$).…
Magnetic two-dimensional materials have potential application in next-generation electronic devices and have stimulated extensive interest in condensed matter physics and material fields. However, how to realize high-temperature…
Atomically thin van der Waals magnetic materials have not only provided a fertile playground to explore basic physics in the two-dimensional (2D) limit but also created vast opportunities for novel ultrafast functional devices. Here we…
The advent of caloric materials for magnetocaloric, elastocaloric, and electrocaloric cooling is changing the landscape of solid state cooling technologies with potentials for high-efficiency and environmentally-friendly residential and…
Ferrimagnetic spinel materials of formula AB2X4, where A and B are transition metals and X is oxygen or sulphur, hold promise for the realization of multiferroic characteristics. In this work, we report synthesis of spinel CoMn2O4 and…
Antiferromagnets (AFMs) are presently considered as promising materials for applications in spintronics and random access memories due to the robustness of information stored in AFM state against perturbing magnetic fields (P. Wadley et…
Compared to the well studied two-dimensional (2D) ferroelectricity, much rare is the appearance of 2D antiferroelectricity, where local dipoles from the nonequivalent sublattices within 2D monolayers are oppositely orientated. Using NbOCl2…