Related papers: Projected mushroom-type phase-change memory
Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state…
Materials that behave like machines, e.g. functional materials that are able to change shape in response to external stimuli (Bhattacharya and James, 2005), often do so by exploiting phase transitions. Shape memory materials and the tail…
Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…
In this article, we use hybrid density functional (HSE06) to study the crystal and electronic structures and optical properties of well known phase change memory material $\mathrm{Ge_{2}Sb_{2}Te_{5}}$. We calculate the structural…
We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phase change memory (PCM) line cells by substantially accelerating resistance drift and bringing it to a stop within a few minutes with application of high electric field…
We propose advancing photonic in-memory computing through three-dimensional photonic-electronic integrated circuits using phase-change materials (PCM) and AlGaAs-CMOS technology. These circuits offer high precision (greater than 12 bits),…
Reservoir computing is a highly efficient machine learning framework for processing temporal data by extracting features from the input signal and mapping them into higher dimensional spaces. Physical reservoir layers have been realized…
The quest for energy-efficient, scalable neuromorphic computing has elevated compute-in-memory (CIM) architectures to the forefront of hardware innovation. While memristive memories have been extensively explored for synaptic implementation…
Reservoir computing is a machine learning paradigm that uses a high-dimensional dynamical system, or \emph{reservoir}, to approximate and predict time series data. The scale, speed and power usage of reservoir computers could be enhanced by…
The development in electronic sector has brought a remarkable change in the life style of mankind. At the same time this technological advancement results adverse effect on environment due to the use of toxic and non degradable materials in…
As conventional technology scaling approaches physical and power limitations, modern computing systems increasingly face performance bottlenecks arising from memory latency, energy consumption, scalability constraints, and data movement…
Phase change materials (PCMs) have long been used as a storage medium in rewritable compact disk and later in random access memory. In recent years, the integration of PCMs with nanophotonic structures has introduced a new paradigm for…
Memory effects during metal-insulator transitions in quantum materials reveal complex physics and potential for novel electronics mimicking biological neural systems. Nonetheless, understanding of memory and nonlinearity in sequential…
Memristor devices are crucial for developing neuromorphic computers and next-generation memory technologies. In this work, we provide a comprehensive modelling tool for simulating static DC reading operations of memristor crossbar arrays…
To make progress in understanding the issue of memory loss and history dependence in evolving complex systems, we consider the mixing rate that specifies how fast the future states become independent of the initial condition. We propose a…
The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive…
During the study of resistive switching devices, researchers have found that the influence of the insertion layer cannot be ignored. Many reports have confirmed that the appropriate insertion layer can significantly improve the performance…
The phase change compound Ge$_2$Sb$_2$Te$_5$ (GST225) is exploited in advanced non-volatile electronic memories and in neuromorphic devices which both rely on a fast and reversible transition between the crystalline and amorphous phases…
The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that the…
Previously, we demonstrated hysteretic and persistent changes of resistivity in two-terminal electronic devices based on charge trapping and detrapping at immobile metastable defects [H. Yin, A. Kumar, J.M. LeBeau, and R. Jaramillo, Phys.…