Related papers: Surface versus Impurity Doping Contributions in In…
Recently, new quantum features have been observed and studied in the area of nanostructured layers. Nanograting on the surface of the thin layer imposes additional boundary conditions on the electron wave function and induces G-doping or…
The Cu substitution effect on the superconductivity of LiFeAs has been studied in comparison with Co/Ni substitution. It is found that the shrinking rate of the lattice parameter c for Cu substitution is much smaller than that of Co/Ni…
Within the two-orbital model for BiS$_{2}$-based superconductors, the effect from a single nonmagnetic impurity scattering on the superconducting-state is investigated in terms of the T-matrix approach. By considering three kinds of the…
A systematic investigation has been performed by synthesis and comprehensive characterization of a series of SmFe1-xCuxAsO0.8F0.2 bulks (x = 0 to 0.2). These samples are well characterized by structural, Raman spectroscopy, microstructural,…
Within the framework of the kinetic energy driven superconducting mechanism, the effect of the extended impurity scatterers on the quasiparticle transport of cuprate superconductors in the superconducting state is studied based on the nodal…
The Nernst effect was measured in the electron-doped cuprate superconductor Pr2-xCexCuO4 (PCCO) at four concentrations, from underdoped (x=0.13) to overdoped (x=0.17), for a wide range of temperatures above the critical temperature Tc. A…
Control of dopants in silicon remains the most important approach to tailoring the properties of electronic materials for integrated circuits, with Group V impurities the most important n-type dopants. At the same time, silicon is finding…
Two critical points have been revealed in the normal-state phase diagram of the electron-doped cuprate superconductor Nd$_{2-x}$Ce$_x$CuO$_4$ by exploring the Fermi surface properties of high quality single crystals by high-field…
The physics of doping a Mott insulator is investigated in the presence of a solid-vacuum interface. Using the embedding approach for dynamical mean field theory we show that the change in surface spectral evolution in a doped Mott insulator…
Complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface and bulk layers) on electrophysical properties of InN epitaxial films is studied. Transport parameters of the surface layer are…
The diversities in crystal structures and ways of doping result in extremely diversified phase diagrams for iron-based superconductors. With angle-resolved photoemission spectroscopy (ARPES), we have systematically studied the effects of…
We report a significant and persistent enhancement of the conductivity in free-standing non intentionnaly doped InAs nanowires upon irradiation in ultra high vacuum. Combining four-point probe transport measurements performed on nanowires…
We review the progress of nonmagnetic impurity doping study on the Fe-based superconductors. On the theoretical side, two highly potential candidates for the pairing symmetry order parameter, i.e. the multi-gap s++ and s+- wave models, have…
Present work focuses on the effective doping of multi-walled carbon nanotube (CNT) in the ZnS:Cu phosphor system and thereafter improvement in the optical performance of electroluminescent (EL) device due to the effect of increased local…
The in-plane penetration depth of Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films at various doping obtained from oxygen reduction has been measured, using AC susceptibility measurements. For the higher doping samples, the superfluid density…
The microwave surface impedance measurements on cuprate superconductors provide the crucial information of the effect of the impurity scattering on the quasiparticle transport, however, the full understanding of the effect of the impurity…
This work examines the influence of thickness on the electrical transport properties of mechanically exfoliated two-dimensional SnSe$_2$ nanosheets, derived from the bulk single crystal. Contrary to conventional trend observed in…
A new doping mechanism is described, whereby a doping impurity does not simply transfer charge to the bands of a host semiconductor or semimetal, but rearranges the core energy levels deep in the valence band of the host. This, in turn,…
Surface effects of a doped thin film made of a strongly correlated material are investigated both in the absence and presence of a perpendicular electric field. We use an inhomogeneous Gutzwiller approximation for a single band Hubbard…
Recent experimental investigations have demonstrated that doping a semiconductor is a route to increase the thermal boundary conductance at metal/semiconductor interfaces. In this work, the influence of the electrical properties on heat…