Related papers: Aluminum Nitride Two-Dimensional-Resonant-Rods
On-chip integration of highly anisotropic two-dimensional (2D) materials offers new opportunities for realizing high performance polarization selective devices. Obtaining optimized designs for such devices requires extensively sweeping…
We investigate gram scale macroscopic bulk acoustic wave (BAW) resonators manufactured from plates of piezoelectric lithium niobate. The intrinsic competing loss mechanisms were studied at cryogenic temperature through precision…
Superconducting qubits have arisen as a leading technology platform for quantum computing which is on the verge of revolutionizing the world's calculation capacities. Nonetheless, the fabrication of computationally reliable qubit circuits…
Achieving monolithic integration of passive acoustic wave devices, in particular RF filters, with active devices such as RF amplifiers and switches, is the optimal solution to meet the challenging communication requirements of mobile…
Deep spectral-line surveys in the mm and sub-mm range can detect thousands of lines per band uncovering the rich chemistry of molecular clouds, star forming regions and circumstellar envelopes, among others objects. The ability to study the…
Ultra-wide bandgap (UWBG) materials such as AlN and BN hold great promise for future power electronics due to their exceptional properties. They exhibit large bandgaps, high breakdown fields, high thermal conductivity, and high mechanical…
The increasing development of wireless communication bands has motivated the development of compact, low-loss, and frequency adjustable RF filtering technologies. Acoustic resonators are the ideal solution to these requirements, and tunable…
Ultra-wide bandgap (UWBG) semiconductors are poised to transform power electronics by surpassing the capabilities of established wide bandgap materials, such as GaN and SiC, owing to their capability to operate at higher voltage, frequency,…
Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a…
High Q-factors of microresonators are crucial for nonlinear integrated photonics, as many nonlinear dynamics have quadratic or even cubic dependence on Q-factors. The unique material properties make AlN microresonators invaluable for…
Conventional speech enhancement technique such as beamforming has known benefits for far-field speech recognition. Our own work in frequency-domain multi-channel acoustic modeling has shown additional improvements by training a spatial…
We present a monolithic integrated aluminum nitride (AlN) optomechanical resonator in which the mechanical motion is actuated by piezoelectric force and the displacement is transduced by a high-Q optical cavity. The AlN optomechanical…
This report presents a robust composite resonator known as the high overtone bulk acoustic wave resonator (HBAR) for demonstrating experimentally the ability of the resonator to tune the envelope of the spectrum by applying dc bias. The…
In the rapidly evolving area of integrated photonics, there is a growing need for materials that satisfy the particular requirements of increasingly complex and specialized devices and applications. Present photonic material platforms have…
Superconducting resonators are widely used in many applications such as qubit readout for quantum computing, and kinetic inductance detectors. These resonators are susceptible to numerous loss and noise mechanisms, especially the…
Reactive aluminum (Al) alloy powders are promising for advanced manufacturing, joining, and energetic applications, yet scalable routes that couple controlled reactivity with safe handling remain limited. While nanoscale Al powders ignite…
N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN…
In nano-device applications using 2D van der Waals materials, a heat dissipation through nano-scale interfaces can be a critical issue for optimizing device performances. By using a time-domain thermoreflectance measurement technique, we…
An ultrabroad absorber based on double-ring-shaped titanium nitride (TiN) nanoresonators, which can work in high temperatures, is proposed and numerically studied. The absorber with some optimal parameters exhibits an averaged absorption of…
The next generation of ultra-dense connected and automated wireless sensor networks (WSN) requires proximity intelligence for many of its applications, especially for identification and localization. This work presents the first…