Related papers: Valley current generation using biased bilayer gra…
Bernal bilayer graphene has recently been discovered to exhibit a wide range of unique ordered phases resulting from interaction-driven effects and encompassing spin and valley magnetism, correlated insulators, correlated metals, and…
Electronic states at domain walls in bilayer graphene are studied by analyzing their four and two band continuum models, by performing numerical calculations on the lattice, and by using quantum geometric arguments. The continuum theories…
Monolayer graphene is an example of materials with multi-valley electronic structure. In such materials, the valley index is being considered as an information carrier. Consequently, relaxation mechanisms leading to loss of valley…
Electrostatically confined quantum dots in bilayer graphene have shown potential as building blocks for quantum technologies. To operate the dots, e.g., as qubits, a precise understanding and control of the confined states and their…
We construct a phenomenological scattering theory for the triangular network of valley Hall states that arises in twisted bilayer graphene under interlayer bias. Crucially, our network model includes scattering between different valley Hall…
We propose an all-electrical setup to generate valley polarization in graphene. A finite graphene sheet is connected to two normal metal electrodes each with two terminals along its zigzag edges, while the armchair edges remain free. When a…
In addition to electron charge and spin, novel materials host another degree of freedom, the valley. For a junction composed of valley filter sandwiched by two normal terminals, we focus on the valley efficiency under disorder with two…
We formulate a theory of transport in graphene bilayers in the weak momentum scattering regime in such a way as to take into account contributions to the electrical conductivity to leading and next-to-leading order in the scattering…
Graphite crystals used to prepare graphene-based heterostructures are generally assumed to be defect free. We report here scanning tunneling microscopy results that show graphite commonly used to prepare graphene devices can contain a…
We study a system composed of graphene decorated with an array of islands with C_3v symmetry that induce quantum dot (IQD) regions via proximity effects and give rise to several spin-orbit couplings (SOCs). We evaluate transport properties…
The tunnel current (TC) and valley current (VC) are crucial in realizing high-speed and energy-saving in next-generation devices. This paper presents the TC and VC link in the partially overlapped graphene. Under the vertical electric…
Physical properties reflecting valley asymmetry of Landau levels in a biased bilayer graphene under magnetic field are discussed. Within the $4-$band continuum model with Hartree-corrected self-consistent gap and finite damping factor we…
We report a study of one-dimensional subband splitting in a bilayer graphene quantum point contact in which quantized conductance in steps of $4\,e^2/h$ is clearly defined down to the lowest subband. While our source-drain bias spectroscopy…
Bilayer graphene has drawn significant attention due to the opening of a band gap in its low energy electronic spectrum, which offers a promising route to electronic applications. The gap can be either tunable through an external electric…
Magic-angle twisted bilayer graphene displays a complex phase diagram as a function of flat band filling, featuring compressibility cascade transitions and a variety of competing ground states with broken spin, valley and point group…
Gapless bilayer graphene is susceptible to a variety of spontaneously gapped states. As predicted by theory and observed by experiment, the ground state is however topologically trivial, because a valley-independent gap is energetically…
Valleytronics is a research field utilizing a valley degree of freedom of electrons for information processing and storage. A strong valley polarization is critical for realistic valleytronic applications. Here, we predict a tunneling…
We investigate a valleytronic device based on graphene with charge separation at different sublattices and correspondingly at nonequivalent valleys. We characterize the maximality condition of valley polarization and investigate the…
The electronic conductance of graphene-based bilayer flake systems reveal different quantum interference effects, such as Fabry-P\'erot resonances and sharp Fano antiresonances on account of competing electronic paths through the device.…
In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular…