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The increasing technological control of two-dimensional materials has allowed the demonstration of 2D lateral junctions, which display unique properties that might serve as the basis for a new generation of 2D electronic and optoelectronic…

Mesoscale and Nanoscale Physics · Physics 2019-03-28 Ferney A. Chaves , David Jiménez

Low-resistance ohmic contacts are a challenge for electronic devices based on two-dimensional materials. We show that an atomically precise junction between a two-dimensional semiconductor and a metallic contact can lead to a…

Contact resistances often contribute significantly to the overall device resistance in organic field-effect transistors (OFETs). Understanding charge injection at the metal-organic interface is critical to optimizing OFET device…

Materials Science · Physics 2009-11-11 D. Natelson , B. H. Hamadani , J. W. Ciszek , D. A. Corley , J. M. Tour

Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe2/MoS2…

Materials Science · Physics 2019-05-07 Jiaqi Zhou , Junfeng Qiao , Chun-Gang Duan , Arnaud Bournel , Kang L. Wang , Weisheng Zhao

Two-dimensional Janus van der Waals (vdW) heterojunctions, referring to the junction containing at least one Janus material, are found to exhibit tuneable electronic structures, wide light adsorption spectra, controllable contact…

Materials Science · Physics 2020-09-29 Lin Ju , Mei Bie , Xiwei Zhang , Xiangming Chen , Liangzhi Kou

The prominent role of electron-electron interactions in two-dimensional (2D) materials versus three-dimensional (3D) ones is at the origin of the great variety of fermionic correlated states reported in the literature. In this respect,…

The crystal structure of MoS$_2$ with strong covalent bonds in plane and weak Van der Waals interactions out of plane gives rise to interesting properties for applications such as solid lubrication, optoelectronics, and catalysis, which can…

Materials Science · Physics 2021-07-28 Rijan Karkee , Enrique Guerrero , David A. Strubbe

In spite of great appeal of two-dimensional (2D) semiconductors for electronics and optoelectronics, to achieve required charge carrier concentrations by means of chemical doping remains a challenge, due to large defect ionization energies…

Materials Science · Physics 2017-11-15 Ji-Hui Yang , Boris. I. Yakobson

Recent technical progress demonstrates the possibility of stacking together virtually any combination of atomically thin crystals of van der Waals bonded compounds to form new types of heterostructures and interfaces. As a result, there is…

Mesoscale and Nanoscale Physics · Physics 2018-07-24 Evgeniy Ponomarev , Nicolas Ubrig , Ignacio Gutiérrez-Lezama , Helmuth Berger , Alberto F. Morpurgo

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…

Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to…

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2.…

We have realized encapsulated trilayer MoS$_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm$^{2}$/(V s) at a density of 3 $\times$ 10$^{12}$~cm$^{-2}$ at a temperature of 1.9~K.…

Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report…

Applied Physics · Physics 2019-11-22 Sachin Gupta , F. Rortais , R. Ohshima , Y. Ando , T. Endo , Y. Miyata , M. Shiraishi

In reduced-dimensional semiconductors, doping-induced carrier plasmons can strongly couple with quasiparticle excitations, leading to a significant band gap renormalization. We develop a new plasmon-pole theory that efficiently and…

Mesoscale and Nanoscale Physics · Physics 2015-02-11 Yufeng Liang , Li Yang

Two-dimensional (2D) superconductors provide a powerful building block for engineering emergent quantum states shaped by reduced dimensionality, enhanced quantum fluctuations, and interfacial symmetry breaking. In van der Waals…

Mesoscale and Nanoscale Physics · Physics 2026-03-04 Sichun Zhao , Junlin Xiong , Ji Zhou , Shi-Jun Liang , Bin Cheng , Feng Miao

We perform a comprehensive first-principles study of the electronic properties of van der Waals (vdW) trilayers via intercalating a two-dimensional (2D) monolayer (ML = BN, MoSe2, WS2, or WSe2) between MoS2 bilayer to form various…

Mesoscale and Nanoscale Physics · Physics 2014-03-14 N. Lu , H. Y. Guo , L. Wang , X. J. Wu , X. C. Zeng

Tungsten diselenide (WSe$_2$) is a promising p-type semiconductor limited by high contact resistance ($R_\textrm{C}$) and the lack of a reliable doping strategy. Here, we demonstrate that exposing WSe$_2$ to chloroform provides simple and…

We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off…

Two-dimensional (2D) heterostructures reveal novel physicochemical phenomena at different length scales, that are highly desirable for technological applications. We present a comprehensive density functional theory study of van der Waals…

Materials Science · Physics 2024-10-21 Kati Asikainen , Matti Alatalo , Marko Huttula , S. Assa Aravindh