Related papers: Charge-noise resilience of two-electron quantum do…
Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar…
The energy spectrum and wave functions of electrons in a single silicon quantum dot provide valuable insights into the capabilities and limitations of such a system in quantum information processing. Here we investigate the low-lying…
Singlet-triplet spin qubits in six-electron double quantum dots, in moderate magnetic fields, can show superior immunity to charge noise. This immunity results from the symmetry of orbitals in the second energy shell of circular quantum…
We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states with different valley compositions in a double quantum dot,…
Semiconductor spin qubits are a promising platform for quantum computing but remain vulnerable to charge noise. Accurate, in situ measurement of charge noise could enable closed-loop control and improve qubit performance. Here, we propose a…
The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over…
It has been recently demonstrated that a singlet-triplet spin qubit in semiconductor double quantum dots can be controlled by changing the height of the potential barrier between the two dots ("barrier control"), which has led to a…
Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results…
Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to…
Electrons confined in Si quantum dots possess orbital, spin, and valley degrees of freedom (d.o.f.). We perform Landau-Zener-Stuckelberg-Majorana (LZSM) interferometry on a Si double quantum dot that is strongly coupled to a microwave…
Charged impurities in semiconductor quantum dots comprise one of the main obstacles to achieving scalable fabrication and manipulation of singlet-triplet spin qubits. We theoretically show that using dots that contain several electrons each…
Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…
Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can…
Charge noise is the main hurdle preventing high-fidelity operation, in particular that of two-qubit gates, of semiconductor-quantum-dot-based spin qubits. While certain sweet spots where charge noise is substantially suppressed have been…
We investigate the singlet-triplet relaxation due to the spin-orbit coupling together with the electron-phonon scattering in two-electron multivalley silicon single quantum dots, using the exact diagonalization method and the Fermi golden…
In the semi-conductor double quantum dot singlet-triplet qubit architecture, the decoherence caused by the qubit's charge environment poses a serious obstacle in the way towards large scale quantum computing. The effects of the charge…
Charge separation from the $(4,0)$ to the $(3,1)$ state in a Si/SiGe double quantum dot is commonly used for initialization of spin qubits and Pauli-spin-blockade readout. It was used in recent experiments involving creation of the $(3,1)$…
One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst…
In Si quantum dot systems, large magnetic field gradients are needed to implement spin rotations via electric dipole spin resonance (EDSR). By increasing the effective electron dipole, flopping mode qubits can provide faster gates with…
We measure and analyze noise-induced energy-fluctuations of spin qubits defined in quantum dots made of isotopically natural silicon. Combining Ramsey, time-correlation of single-shot measurements, and CPMG experiments, we cover the qubit…