Related papers: A double quantum dot defined by top gates in a sin…
The $s_z=0$ spin configuration of two electrons confined at a double quantum dot (DQD) encodes the singlet-triplet qubit (STQ). We introduce the inverted STQ (ISTQ) that emerges from the setup of two quantum dots (QDs) differing…
We study an accumulation mode Si/SiGe double quantum dot (DQD) containing a single electron that is dipole coupled to microwave photons in a superconducting cavity. Measurements of the cavity transmission reveal dispersive features due to…
The double quantum dot device benefits from the advantages of both the spin and charge qubits, while offering ways to mitigate their drawbacks. Careful gate voltage modulation can grant greater spinlike or chargelike dynamics to the device,…
Self-assembled InAs quantum dots (QDs) grown on GaAs(001) surface by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-3D (Q3D) and 3D QDs, whose volume density evolution is…
Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been made in developing robust two qubit logic gates in…
We present a detailed study of the surface acoustic wave mediated quantized transport of electrons through a split gate device containing an impurity potential defined quantum dot within the split gate channel. A new regime of quantized…
Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots…
We propose and demonstrate wide-band capacitance measurements on a semiconductor double-quantum dot (DQD) to study tunneling dynamics. By applying phase-tunable high-frequency signals independently to the DQD and a nearby…
Tuning of gate-defined semiconductor quantum dots (QDs) is a major bottleneck for scaling spin qubit technologies. We present a deep learning (DL) driven, semantic-segmentation pipeline that performs charge auto-tuning by locating…
The generation, manipulation, storage, and detection of single photons play a central role in emerging photonic quantum information technology. Individual photons serve as flying qubits and transmit the quantum information at high speed and…
An implementation of a universal solid-state quantum register based on electron space states in field-defined double quantum dots (DQD possesses one electron in two adjacent tunnel bound dots) in an ultrathin semiconductor nanowire is…
We investigate electronic transport through parallel double quantum dot(DQD) system with strong on-site Coulomb interaction and capacitive interdot coupling. By applying numerical renormalization group(NRG) method, the ground state of the…
We describe a single-level quantum dot in contact with two leads as a nanoscale finite-time thermodynamic machine. The dot is driven by an external stochastic force that switches its energy between two values. In the isothermal regime, it…
Carbon nanotubes are a versatile material in which many aspects of condensed matter physics come together. Recent discoveries, enabled by sophisticated fabrication, have uncovered new phenomena that completely change our understanding of…
We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double…
Distributed quantum computing (DQC) combines the computing power of multiple networked quantum processing modules, enabling the execution of large quantum circuits without compromising on performance and connectivity. Photonic networks are…
Quantum confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder…
We report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe$_2$. The devices were operated with gates above and below the WSe$_2$ layer to accumulate a hole gas, which for some devices was…
We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion…
We studied transport through ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K, the devices show single-electron or single-hole transport through the lithographically defined…