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Magnetic anisotropy is a key parameter to describe the exchange bias effect in heterostructures. In this paper, we describe explicit density functional calculations of the magnetic structure of an interface between the industrially…

Materials Science · Physics 2025-09-03 Robert A. Lawrence , Matt I. J. Probert

We investigate thickness series of films of the Heusler alloy Co$_2$FeAl in order to study the effect of annealing on the interface with a MgO layer and on the bulk magnetic properties. Our results reveal that while the perpendicular…

Materials Science · Physics 2018-04-18 Andres Conca , Alessia Niesen , Günter Reiss , Burkard Hillebrands

We report the phase-transition controlled magnetic anisotropy modulation in the (Co/Pt)2/VO2 heterostructure, where VO2 is introduced into the system to applied an interfacial strain by its metal-insulator transition. A large reversible…

Mesoscale and Nanoscale Physics · Physics 2019-01-23 Guodong Wei , Xiaoyang Lin , Zhizhong Si , Yanxue Chen , Sylvain Eimer , Weisheng Zhao

The interfacial oxidation level and thermodynamic properties of the MgO-based perpendicular magnetic tunneling junctions are investigated. The symmetry-conserved tunneling effect depends sensitively on the MgO adatom energy during the RF…

Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn$_2$Ru$_x$Ga in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation…

We study the annealing stability of bottom-pinned perpendicularly magnetized magnetic tunnel junctions based on dual MgO free layers and thin fixed systems comprising a hard [Co/Ni] multilayer antiferromagnetically coupled to thin a Co…

Materials Science · Physics 2017-03-22 T. Devolder , S. Couet , J. Swerts , E. Liu , T. Lin , S. Mertens , G. Kar , A. Furnemont

Towards next-generation spintronics devices, such as computer memories and logic chips, it is necessary to satisfy high thermal stability, low-power consumption and high spin-polarization simultaneously. Here, from first-principles, we…

Materials Science · Physics 2014-11-04 Zhaoqiang Bai , Lei Shen , Yongqing Cai , Qingyun Wu , Minggang Zeng , Guchang Han , Yuan Ping Feng

We have studied the magnetic properties of multilayers composed of ferromagnetic metal Co and heavy metals with strong spin orbit coupling (Pt and Ir). Multilayers with symmetric (ABA stacking) and asymmetric (ABC stacking) structures are…

We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows…

Fabrication of perpendicularly magnetized ferromagnetic films on various buffer layers, especially on numerous newly discovered spin-orbit torque (SOT) materials to construct energy-efficient spin-orbitronic devices, is a long-standing…

Mesoscale and Nanoscale Physics · Physics 2022-10-05 Kaihua Lou , Tunan Xie , Qianwen Zhao , Baiqing Jiang , ChaoChao Xia , Hanying Zhang , Zhihong Yao , Chong Bi

Controlling magnetic properties through the application of an electric field is a significant challenge in modern nanomagnetism. In this study, we investigate the magneto-ionic control of magnetic anisotropy in the topmost Co layer in…

We systematically investigated the Ni and Co thickness-dependent perpendicular magnetic anisotropy (PMA) coefficient, magnetic domain structures, and magnetization dynamics of Pt(5 nm)/[Co(t_Co nm)/Ni(t_Ni nm)]5/Pt(1 nm) multilayers by…

The perpendicular magnetic anisotropy at the Co/oxide interface in Pt/Co/MOx (MOx = MgOx, AlOx, TbOx) was modified by an electric field using a 10 nm-thick ZrO2 as a solid electrolyte. The large voltage-driven modification of interfacial…

Mesoscale and Nanoscale Physics · Physics 2021-01-04 Aymen Fassatoui , Jose Pena Garcia , Jan Vogel , Laurent Ranno , Anne Bernand-Mantel , Hélène Béa , Sergio Pizzini , Stefania Pizzini

Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a…

X-ray spectroscopy measurements have been performed on a series of Pt/Co/AlOx trilayers to investigate the role of Co oxidation in the perpendicular magnetic anisotropy of the Co/AlOx interface. It is observed that high temperature…

Ferromagnetic insulating garnet films with perpendicular magnetic anisotropy (PMA) are of great importance for the applications in spintronics. Tm3Fe5O12 (TmIG) with magnetoelastic anisotropy has been proven to exhibit PMA more easily than…

Materials Science · Physics 2025-02-20 Yufeng Wang , Peng Zhou , Shuai Liu , Yajun Qi , Tianjin Zhang

Based on a detailed theoretical examination of the lattice distortion in high-index epilayers in terms of continuum mechanics, expressions are deduced that allow the calculation and experimental determination of the strain tensor for…

Materials Science · Physics 2015-05-18 L. Dreher , D. Donhauser , J. Daeubler , M. Glunk , C. Rapp , W. Schoch , R. Sauer , W. Limmer

The origin of large perpendicular magneto-crystalline anisotropy (PMCA) in Fe/MgO (001) is revealed by comparing Fe layers with and without the MgO. Although Fe-O $p$-$d$ hybridization is weakly present, it cannot be the main origin of the…

Materials Science · Physics 2016-04-29 Dorj Odkhuu , Won Seok Yun , S. H. Rhim , Soon-Cheol Hong

We have performed a systematic investigation of magnetotransport of a series of as-grown and annealed Ga1-xMnxAs samples with 0.011 <= x <= 0.09. We find that the anisotropic magnetoresistance (AMR) generally decreases with increasing…

Materials Science · Physics 2009-11-11 K. Y. Wang , K. W. Edmonds , R. P. Campion , L. X. Zhao , C. T. Foxon , B. L. Gallagher

To get stable perpendicularly magnetized tunnel junctions at small device dimensions, composite free layers that comprise two MgO/FeCoB interfaces as sources of interface anisotropy are generally used. Proper cristallisation and annealing…

Materials Science · Physics 2019-09-09 T. Devolder , S. Couet , J. Swerts , S. Mertens , S. Rao , G. S. Kar