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We introduce an advanced material system for the production and spectroscopy of single silicon vacancy (SiV) color centers in diamond. We use microwave plasma chemical vapor deposition to synthesize heteroepitaxial nanodiamonds of approx.…

Materials Science · Physics 2011-11-16 Elke Neu , Martin Fischer , Stefan Gsell , Matthias Schreck , Christoph Becher

We present a technique that uses an ensemble of nitrogen-vacancy (NV) centers in diamond to image magnetic fields with high spatio-temporal resolution and sensitivity. A focused laser beam is raster-scanned using an acousto-optic deflector…

The nitrogen-vacancy (NV) centers in diamond sensing has been considered to be a promising micro-nano scale thermometer due to its high stability, good temperature resolution and integration. In this work, we fabricated the sensing core by…

Applied Physics · Physics 2021-11-16 Ke-Chen Ouyang , Zheng Wang , Li Xing , Xiao-Juan Feng , Jin-Tao Zhang , Cheng Ren , Xing-Tuan Yang

We present an experimental and theoretical study of the optically detected magnetic resonance signals for ensembles of negatively charged nitrogen-vacancy (NV) centers in 13C isotopically enriched single-crystal diamond. We observe four…

Quantum Physics · Physics 2016-12-21 A. Jarmola , Z. Bodrog , P. Kehayias , M. Markham , J. Hall , D. J. Twitchen , V. M. Acosta , A. Gali , D. Budker

Silicon-vacancy (SiV) centers in diamond are a promising candidate for all-optical nanoscale high-sensitivity thermometry because they have sufficient sensitivity to reach the subkelvin precision required for application to biosystems. It…

Diamond has long been identified as a potential host material for laser applications. This potential arises due to its exceptional thermal properties, ultra-wide bandgap, and color centers which promise gain across the visible spectrum.…

Dislocations are fundamental crystal defects whose stress fields govern a wide range of material properties. The analytical form of the stress tensor around single dislocation was established by elasticity theory more than 80 years ago and…

Materials Science · Physics 2026-01-05 Takeyuki Tsuji , Shunta Harada , Tokuyuki Teraji

The controlled creation of quantum emitters in diamond represents a major research effort in the fabrication of single-photon devices. Here, we present the scalable production of silicon-vacancy (SiV) color centers in single-crystal diamond…

The nitrogen-vacancy (NV) color center in diamond is an atom-like system in the solid-state which specific spin properties can be efficiently used as a sensitive magnetic sensor. An external magnetic field induces Zeeman shifts of the NV…

Mesoscale and Nanoscale Physics · Physics 2015-07-17 M. Chipaux , A. Tallaire , J. Achard , S. Pezzagna , J. Meijer , V. Jacques , J. -F. Roch , T. Debuisschert

Negatively charged silicon vacancy centers (SiV$^-$) in diamond exhibit excellent spin coherence and optical properties, making them promising candidates for quantum technologies. However, the strain-induced inhomogeneous distribution of…

The coherence characteristics of a tin-vacancy color center in diamond are investigated through optical means including coherent population trapping between the ground state orbital levels and linewidth broadening effects. Due to the large…

The silicon-vacancy center in diamond offers attractive opportunities in quantum photonics due to its favorable optical properties and optically addressable electronic spin. Here, we combine both to achieve all-optical coherent control of…

We report the development of an experimental approach that can characterize the energy level structure of an individual silicon vacancy (SiV) center in a magnetic field and extract the key parameters for the energy level structure. This…

Mesoscale and Nanoscale Physics · Physics 2024-12-04 Shuhao Wu , Xinzhu Li , Ian Gallagher , Lexington Mandachi , Benjamin Lawrie , Hailin Wang

Spin ensembles of nitrogen vacancy (NV) centers in diamond are emerging as powerful spin-based sensors for magnetic, electric and thermal field imaging with high spatial and temporal resolution. Here we characterize the formation of…

Materials Science · Physics 2019-11-13 Tim R. Eichhorn , Claire A. McLellan , Ania C. B. Jayich

An ensemble of nitrogen-vacancy (NV) centers in diamond is a fascinating candidate to realize a sensitive magnetic field sensor. In particular, since the axes of the NV centers are distributed along four directions, a collection of…

Quantum Physics · Physics 2019-02-20 Ken Yahata , Yuichiro Matsuzaki , Shiro Saito , Hideyuki Watanabe , Junko Ishi-Hayase

The nitrogen-vacancy (NV) center in diamond is a solid-state spin defect that has been widely adopted for quantum sensing and quantum information processing applications. Typically, experiments are performed either with a single isolated NV…

Quantum Physics · Physics 2025-03-19 Matthew Cambria , Saroj Chand , Caitlin Reiter , Shimon Kolkowitz

Solid-state spin defects, such as color centers in diamond, are among the most promising candidates for scalable and integrated quantum technologies. In particular, the good optical properties of silicon-vacancy centers in diamond combined…

Quantum Physics · Physics 2024-09-20 Marco Klotz , Andreas Tangemann , Alexander Kubanek

Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid state platform. However, the solid…

The negatively charged silicon vacancy [V$_\text{Si}(-)$] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V$_\text{Si}(-)$ defect possesses $S = 3/2$ spin with long spin coherence time and can be…

Materials Science · Physics 2021-08-04 A. Csóré , N. T. Son , A. Gali

We have characterized thermal susceptibilities of the spectral band at 740 nm of silicon-vacancy (SiV) centers in Si- and Si,P-doped nanodiamonds over a temperature range from 295 K to 350 K, which is of interest for thermometry in…

Mesoscale and Nanoscale Physics · Physics 2019-06-26 Sumin Choi , Viatcheslav N. Agafonov , Valery A. Davydov , L. F. Kulikova , Taras Plakhotnik
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