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Silicon-nitride-on-insulator photonic circuits have seen tremendous advances in many applications, such as on-chip frequency combs, Lidar, telecommunications, and spectroscopy. So far, the best film quality has been achieved with low…
Visible light integrated photonics is emerging as a promising technology for the realization of optical devices for applications in sensing, quantum information and communications, imaging and displays. Among the existing photonic…
The integrated photonics CMOS-compatible silicon nitride (SiN) platform is praised for its low propagation loss, but is limited by its lack of active functionalities such as a strong Pockels coefficient and intrinsic \c{hi}(2) nonlinearity.…
Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for…
Broadband mid-infrared (mid-IR) spectroscopy applications could greatly benefit from today's well-developed, highly scalable silicon photonics technology; however, this platform lacks broadband transparency due to its reliance on absorptive…
In the past decade, lithium niobate (LiNbO3 or LN) photonics, thanks to its heat-free and fast electro-optical modulation, second-order non-linearities and low loss, has been extensively investigated. Despite numerous demonstrations of…
Integrated photonics has enabled signal synthesis, modulation and conversion using photonic integrated circuits (PIC). Many materials have been developed, among which silicon nitride (Si$_3$N$_4$) has emerged as a leading platform…
Silicon nitride (SiN) formed via low pressure chemical vapor deposition (LPCVD) is an ideal material platform for on-chip nonlinear photonics owing to its low propagation loss and competitive nonlinear index. Despite this, LPCVD SiN is…
Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm. With the development of nitride, arsenide, and…
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics due to its large $\chi^{(2)}$ nonlinearity. Here we demonstrate the hybrid integration of AlN on silicon nitride (SiN) photonic chips. Composite microrings are…
Rapid progress in photonics has led to an explosion of integrated devices that promise to deliver the same performance as table-top technology at the nanoscale; heralding the next generation of optical communications, sensing and metrology,…
Photonic systems and technologies traditionally relegated to table-top experiments are poised to make the leap from the laboratory to real-world applications through integration. Stimulated Brillouin scattering (SBS) lasers, through their…
We demonstrate an external cavity laser formed by combining a silicon nitride photonic integrated circuit with a reflective semiconductor optical amplifier. The laser uses an alignment tolerant edge coupler formed by a multi-mode waveguide…
The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has…
Heterogeneously-integrated electro-optic modulators (EOM) are demonstrated using the hybrid-mode concept, incorporating thin-film lithium niobate (LN) by bonding with silicon nitride (SiN) passive photonics. At wavelengths near 1550 nm,…
We present an approach to fabrication and packaging of integrated photonic devices that utilizes waveguide and detector layers deposited at near-ambient temperature. All lithography is performed with a 365 nm i-line stepper, facilitating…
Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V…
Tunable lasers emitting at a 2-3 $\mu$m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si$_3$N$_4$ photonic…
The stringent demands of photonic quantum computing protocols motivate photonic integrated circuit (PIC) platforms with passive optical properties such as extremely low losses and correspondingly large circuit depths, as well as active…
Broadband active materials are pivotal for advancing emerging technologies spanning on-chip optical interconnects, artificial intelligence, quantum systems and precision metrology. Current semiconductor gain media face bandwidth…