Related papers: Electronic properties of bismuth nanostructures
The low-energy electronic Hamiltonian for the thinest zigzag carbon nanotube, embedded into a dielectric host, is derived and its phase diagram is discussed. The specific multi-band structure and the microscopic form of the…
All non-interacting two-dimensional electronic systems are expected to exhibit an insulating ground state. This conspicuous absence of the metallic phase has been challenged only in the case of low-disorder, low density, semiconducting…
We study electron transport properties of some molecular wires and a unconventional disordered thin film within the tight-binding framework using Green's function technique. We show that electron transport is significantly affected by…
The material BaBiO$_{3}$ is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because BaBiO$_{3}$ is suggested to return to its undistorted cubic phase where the oxygen octahedra…
Recently, there have been intense efforts in searching for new topological insulator (TI) materials. Based on first-principles calculations, we find that all the ultrathin Bi (111) films are characterized by a nontrivial Z2 number…
We analyze the spectral properties of a very general two-channel fermion-boson transport model in the insulating and metallic regimes, and the signatures of the metal-insulator quantum phase transition in between. To this end we determine…
We study the effect of a structural nanoconstriction on the coherent transport properties of otherwise ideal zig-zag-edged infinitely long graphene ribbons. The electronic structure is calculated with the standard one-orbital tight-binding…
Using wide-band (0.5-6.5 eV) spectroscopic ellipsometry we study ultrathin [Bi(0.6-2.5 nm)-FeNi(0.8,1.2 nm)]N multilayer films grown by rf sputtering deposition, where the FeNi layer has a nanoisland structure and its morphology and…
Interfacing bulk conducting topological Bi$_2$Se$_3$ films with s-wave superconductors initiates strong superconducting order in the nontrivial surface states. However, bulk insulating topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on bulk…
We solve a very general two-channel fermion-boson model describing charge transport within some background medium by means of a refined pseudo-site density matrix renormalization group (DMRG) technique. Performing a careful finite-size…
Most of the works devoted so far to the electronic band structure of multiwall nanotubes have been restricted to the case where the individual layers have the same helicity. By comparison, much less is known on the electronic properties of…
Optical spectroscopy was used to study the electrodynamics and hidden transport properties of a BaFe$_{1.91}$Ni$_{0.09}$As$_{2}$ thin superconducting film. We analyzed the normal state data using a Drude-Lorentz model with two Drude…
We study transport properties of an arbitrary two terminal Hermitian system within a tight-binding approximation and derive the expression for the transparency in the form, which enables one to determine exact energies of perfect (unity)…
The miniaturization of electronic devices has led to the prominence, in technological applications, of semiconductor thin films that are only a few nanometers thick. In spite of intense research, the thickness-dependent resistivity or…
Size-dependent quantization of energy spectrum of conducting electrons in solids leads to oscillating dependence of electronic properties on corresponding dimension(s). In conventional metals with typical energy Fermi EF~1 eV and the charge…
This paper discusses a few unique effects of ultra-thin-body double-gate NMOSFET that are arising from the bandstructure of the thin film Si channel. The bandstructure has been calculated using 10-orbital $sp^3d^5s^*$ tight-binding method.…
The superconducting properties of the 2D fermion system with local and different types of the indirect boson-exchange attractions in the cases of s-wave and d-wave pairing are reviewed and analysed at T=0. In particular, the possibility of…
We analyze the transport properties in approximants of quasicrystals alpha-AlMnSi, 1/1-AlCuFe and for the complex metallic phase lambda-AlMn. These phases presents strong analogies in their local atomic structures and are related to…
In spatially periodic Hermitian systems, such as electronic systems in crystals, the band structure is described by the band theory in terms of the Bloch wave functions, which reproduce energy levels for large systems with open boundaries.…
One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients…