Related papers: Vapor-solid-solid growth dynamics in GaAs nanowire…

Hetero-epitaxial growth on a strain-relief vicinal patterned substrate has revealed unprecedented 2D long range ordered growth of uniform cobalt nanostructures. The morphology of a Co sub-monolayer deposit on a Au(111) reconstructed vicinal…

GaAs nanowires were grown by metalorganic vapor phase epitaxy on evaporated metal films (Au, Au / Pd, Ag, Ni, Ga, Cu, Al, Ti). The samples were characterized by scanning electron microscope (SEM) and transmission electron microscope (TEM).…

III-V semiconductor nanowires are considered promising building blocks for advanced photonic devices. One of the key advantages is that the lattice mismatch can easily be accommodated in 1D structures, resulting in superior heteroepitaxial…

We report a method to precisely control the atomic defects at grain boundaries (GBs) of monolayer MoS2 by vapor-liquid-solid (VLS) growth using sodium molybdate liquid alloys, which serve as growth catalysts to guide the formations of the…

The growth of ZnTe nanowires and ZnTe-CdTe nanowire heterostructures is studied by \emph{in situ} transmission electron microscopy. We describe the shape, and the change of shape, of the solid gold nanoparticle during vapor-solid-solid…

The kinetics of main physical processes controlling the growth of nanowires (NW) via evolution pass " vapor-liquid-solid" is considered. The roles of the thermodynamics and kinetics of cluster nucleation in the initial stage of NW formation…

The exploration of new catalysts for the vapor-liquid-solid (VLS) synthesis of one-dimensional (1-D) materials promises to yield new morphologies and functionality. Here, we show, for the model ZnO system, that this possible using a…

Assembling nanostructured building blocks into network materials unlocks macroscopic properties inaccessible with monolithic solids, notably toughness and tolerance to electrochemical alloying. A method is reported for large-scale,…

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects…

Crystal growth of semiconductor nanowires from a liquid droplet depends on the stability of this droplet at the liquid-solid interface. By combining in-situ transmission electron microscopy with theoretical analysis of the surface energies…

Using pulsed laser ablation with arsenic over pressure, the growth conditions for GaAs nanowires have been systematically investigated and optimized. Arsenic over pressure with As$_2$ molecules was introduced to the system by thermal…

GaAs(111)B is a semiconductor substrate widely used in research and commercial fields due to its low cost, mature synthesis technology, and excellent properties for manufacturing electronic devices. It is not only used to grow…

Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p-i-n junctions to greatly enhance light emission/absorption. However, the surface curvature makes the…

The incubation time preceding nucleation and growth of surface nanostructures is interesting from a fundamental viewpoint but also of practical relevance as it determines statistical properties of nanostructure ensembles such as size…

Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped…

Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG…

(In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental…

Interest in hybrid electronic devices for quantum science is driving the research into superconductor-semiconductor materials combinations. Here we study InAs nanowires coated with shells of $\beta$-Sn. The wires grow via the…

GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch…

Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence,…