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The rich and electrostatically tunable phase diagram exhibited by moir\'e materials has made them a suitable platform for hosting single material multi-purpose devices. To engineer such devices, understanding electronic transport and…
We investigate the quantum transport dynamics of electrons in a multi-path Aharonov-Bohm interferometer comprising several parallel graphene nanoribbons. At low magnetic field strengths, the conductance displays a complex oscillatory…
We theoretically analyse the possibility to electrostatically confine electrons in circular quantum dot arrays, impressed on contacted graphene nanoribbons by top gates. Utilising exact numerical techniques, we compute the scattering…
We investigate the universal properties of quantum transport in graphene nanowires that engender subtle universal conductance fluctuations. We present results for three of the main microscopic models that describe the sublattice of graphene…
Topological properties of electronic states in multivalley two-dimensional materials, such as mono- and bilayer graphene, or thin films of rhombohedral graphite, give rise to various unusual magneto-transport regimes. Here, we investigate…
Graphene nanoribbon quantum dot qubits have been proposed as promising candidates for quantum computing applications to overcome the spin-decoherence problems associated with typical semiconductor (e.g. GaAs) quantum dot qubits. We perform…
Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…
HgTe quantum wells possess remarkable physical properties as for instance the quantum spin Hall state and the 'single-valley' analog of graphene, depending on their layer thicknesses and barrier composition. However, double HgTe quantum…
We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a…
The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap in…
Usually, graphene is used in its horizontal directions to design novel concept devices. Here, we report a single electron tunneling diode based on quantum tunneling through a vertical graphene two-barrier junction. The junction is formed by…
We report a study of one-dimensional subband splitting in a bilayer graphene quantum point contact in which quantized conductance in steps of $4\,e^2/h$ is clearly defined down to the lowest subband. While our source-drain bias spectroscopy…
We study topological bound states in quantum dots defined by an electric field in bilayer graphene. An external field is perpendicular to the bilayer and changes sign in a finite region that defines the quantum dot. The electric field opens…
We theoretically study the transport properties of both monolayer and bilayer graphene in the presence of electron-hole puddles induced by charged impurities which are invariably present in the graphene environment. We calculate the…
We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures. A salient feature of our review is a…
The quantum Hall effects in the sliding bilayer graphene and AAB-stacked trilayer system are investigated by the Kubo formula and the generalized tight-binding model. The various stacking configurations can greatly diversify the magnetic…
Intrinsic and extrinsic valley Hall effects are predicted to emerge in graphene systems with uniform or spatially-varying mass terms. Extrinsic mechanisms, mediated by the valley-dependent scattering of electrons at the Fermi surface, can…
We study spin-dependent transport through a quantum nanostructure composed of a quantum dot (QD) surrounded by a quantum nanoring. The nanostructure is side-attached to source and drain electrodes and we assume that the confining potential…
We investigate the conductance of a quantum wire with two embedded quantum dots using a T-matrix approach based on the Lippmann-Schwinger formalism. The quantum dots are represented by a quantum well with Gaussian shape and the wire is…
We present a theory of single-electron tunneling transport through a ferromagnetic nanoparticle in which particle-hole excitations are coupled to spin collective modes. The model employed to describe the interaction between quasiparticles…