Related papers: Anisotropic magnetoresistance and memory effect in…
We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different…
Theoretical studies are presented on weak localization effects and magnetoresistance in quasi-one-dimensional systems with open Fermi surfaces. Based on the Wigner representation, the magnetoresistance in the region of weak field has been…
The attainability of modification of the apparent magnetic anisotropy in (III,Mn)V ferromagnetic semiconductors is probed by means of the finite-elements-based modelling. The most representative case of (Ga,Mn)As and its in-plane uniaxial…
Recent measurements of the magnetoresistance (MR) of amorphous superconducting thin films in tilted magnetic fields have displayed several surprising experimental details, in particular a strong dependence of the MR on field angle at low…
The dominant dielectric used currently in silicon devices is silicon oxide. Its application for future devices will be impeded by several fundamental limitations which lead to low reliability of semiconductor devices and to the necessity of…
The magnetic characteristics for superconducting samples of different geometries (plates and films of various widths) and orientation with respect to external field are compared. A similarity is established between the magnetization curves…
We study the effects of anisotropy on the magnetoresistance of Weyl semimetals (WSMs) in the ultraquantum regime. We utilize the fact that many Weyl semimetals are approximately axially anisotropic. We find that anisotropy manifests itself…
Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and…
We investigated the effect of an electric field on the interface magnetic anisotropy of a thin MgO/Fe/MgO layer using density functional theory. The perpendicular magnetic anisotropy energy (MAE) increases not only under electron depletion…
Very large anisotropies in transport quantities have been observed in the presence of very small in-plane structural anisotropy in many strongly correlated electron materials. By studying the two-dimensional Hubbard model with…
We report the thermodynamic properties studied by thermal expansion, magnetostriction, magnetisation, and specific heat measurements as well as the low-energy magnetic excitations of \mto\ and investigate how magneto-elastic coupling and…
Strange metals exhibit a variety of anomalous magnetotransport properties, the most striking of which is a resistivity that increases linearly with magnetic field $B$ over a broad temperature and field range. The ubiquity of this behavior…
We discuss the physical properties of realistic memristive, memcapacitive and meminductive systems. In particular, by employing the well-known theory of response functions and microscopic derivations, we show that resistors, capacitors and…
Extremely large positive magnetoresistance (XMR) was found in a nonmagnetic semimetal InBi. Using several single crystals with different residual resistivity ratios (RRRs), we revealed that the XMR strongly depended on the RRR (sample…
Antiferromagnetic spintronics actively introduces new principles of magnetic memory, in which the most fundamental spin-dependent phenomena, i.e. anisotropic magnetoresistance effects, are governed by an antiferromagnet instead of a…
We investigate the universal electronic transport for a mixed $d_{x^2-y^2}$+s-wave superconductor in the presence of an anisotropic elliptical Fermi surface. Similar to the universal low-temperature transport predicted in a…
In the absence of time-reversal invariance, metals without inversion symmetry may exhibit nonreciprocal charge transport -- a magnetochiral anisotropy that manifests as unequal electrical resistance for opposite current flow directions. If…
Magnetoconductance (MC) in a parallel magnetic field B has been measured in a two-dimensional electron system in Si, in the regime where the conductivity decreases as \sigma (n_s,T,B=0)=\sigma (n_s,T=0) + A(n_s)T^2 (n_s -- carrier density)…
Magnetic nanowires are a good platform to study fundamental processes in Magnetism and have many attractive applications in recording such as perpendicular storage and in spintronics such as non-volatile magnetic memory devices (MRAM) and…
Many of the most interesting and technologically important electronic materials discovered in the past two decades have two common features: a layered crystal structure and strong interactions between electrons. Two of the most fundamental…