Related papers: Spin relaxation in diluted magnetic semiconductors…
A semiclassical Monte Carlo approach is adopted to study the multivalley spin depolarization of drifting electrons in a doped n-type GaAs bulk semiconductor, in a wide range of lattice temperature ($40<T_L<300$ K) and doping density…
We consider spin relaxation dynamics in cold Fermi gases with a pure-gauge spin-orbit coupling corresponding to recent experiments. We show that such experiments can give a direct access to the collisional spin drag rate, and establish…
We observe the noise spectrum of electron spins in bulk GaAs by Faraday rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron spin dynamics in semiconductors. We measure exemplarily the…
Impurity nuclear spin relaxation is studied theoretically. A single impurity generates a bound state localized around the impurity atom in unconventional superconductors. With increasing impurity potential, the relaxation rate $T_1^{-1}$ is…
We present muon spin lattice relaxation measurements in the V15 spin 1/2 molecular nano-magnet. We find that the relaxation rate in low magnetic fields (<5 kG) is temperature independent below ~10 K, implying that the molecular spin is…
We study the relaxation dynamics of the electron system in graphene flakes under Landau quantization regime using a novel approach of time-resolved Raman scattering. The non-resonant character of the experiment allows us to analyze the…
The processes of spin diffusion and relaxation are studied theoretically and numerically for quantum computation applications. Two possible realizations of a spin quantum computer (SQC) are analyzed: (i) a boundary spin chain in a 2D spin…
We study the spin relaxation in an interacting two--dimensional electron gas in a strong magnetic field for the case that the electron density is close to filling just one Landau sub--level of one spin projection, i.e., for filling factor…
Electron spin relaxation rate (eSR) is investigated on several organic semiconductors of different morphologies and molecular structures, using avoided level crossing muon spectroscopy as a local spin probe. We find that two functionalized…
We propose that localized defects in magnetic semiconductors act as deep impurities and can be described by the Anderson model. Within this model, hybridization of d-orbitals and p-orbitals gives rise to a non-RKKY indirect exchange…
Spin relaxation in the ultrathin metallic films of stacked microelectronic devices is investigated on the basis of a modified Landau-Lifshitz equation of micromagnetic dynamics in which the damping torque is treated as originating from the…
In response to recent proton spin relaxation-time measurements on NiCu(pba)(H$_2$O)$_3$$\cdot$2H$_2$O with ${pba}=1,3{-propylenebis(oxamato)}$, which is an excellent one-dimensional ferrimagnetic Heisenberg model system of spin-$(1,{1/2})$,…
The transport property of a lateral two-dimensional diluted magnetic semiconductor electron gas under a spatially periodic magnetic field is investigated theoretically. We find that the electron Fermi velocity along the modulation direction…
We present a systematic study of the temperature dependence of diffusive magnon spin transport, using a non-local device geometry. In our measurements, we detect spin signals arising from electrical and thermal magnon generation, and we…
We suggest an approach to account for spatial (composition) and thermal fluctuations in "disordered" magnetic models (e.g. Heisenberg, Ising) with given spatial dependence of magnetic spin-spin interaction. Our approach is based on…
Diluted magnetic semiconductors (DMSs) based on group-IV materials are desirable for spintronic devices compatible with current silicon technology. In this work, amorphous Mn-doped SiGe thin films were first fabricated on Ge substrates by…
The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of…
Non-local measurements are performed on a multi terminal device to $in-situ$ determine the spin diffusion length and in combination with resistivity measurements also the spin relaxation time in Al films. By varying the thickness of Al we…
We present a theory of magnetic (S=1) Ni and nonmagnetic Zn impurities in underdoped cuprates. Both types of impurities are shown to induce S=1/2 moments on Cu sites in the proximity of the impurity, a process which is intimately related to…
The direct electrical method was used to study the behavior of the spin Hall effect in a magnetic field perpendicular to the injection current in aluminum samples with resistivities that differed by two orders of magnitude at a temperature…