Related papers: Computational Fermi level engineering and doping-t…
A theory of strongly correlated electron or hole liquids with the fermion condensate is presented and applied to the consideration of quasiparticle excitations in high temperature superconductors, in their superconducting and normal states.…
A new doping mechanism is described, whereby a doping impurity does not simply transfer charge to the bands of a host semiconductor or semimetal, but rearranges the core energy levels deep in the valence band of the host. This, in turn,…
Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless characterization of doping with nanometer scale resolution. Here,…
Understanding the doping evolution from a Mott insulator to a superconductor probably holds the key for resolving the mystery of unconventional superconductivity in copper oxides. To elucidate the evolution of the electronic state starting…
We measure the penetration depth of optimally doped and underdoped La2-xCexCuO4 in the millimeter frequency domain (4 - 7 cm-1) and for temperatures 2 K < T < 300 K. The penetration depth as function of temperature reveals significant…
Inorganic Halide perovskites (HP's) of the CsPbX3 (X=I, Br, Cl) type have reached prominence in photovoltaic solar cell efficiencies. Peculiarly, they have shown, however, an asymmetry in their ability to be doped by holes rather than by…
Using the strong coupling diagram technique, low-temperature spectral properties of the two-dimensional fermionic Hubbard model are con\-si\-de\-red for strong and moderate Hubbard repulsions $U$. The electron hopping to the nearest, second…
Buried two dimensional electron gasses (2DEGs) have recently attracted considerable attention as a testing ground for both fundamental physics and quantum computation applications. Such 2DEGs can be created by phosphorus delta (\delta)…
The Weyl semimetallic compound Eu2Ir2O7 along with its hole doped derivatives (which is achieved by substituting trivalent Eu by divalent Sr) are investigated through transport, magnetic and calorimetric studies. The metal-insulator…
Wide-bandgap two-dimensional (2D) beta-TeO2 has been reported as a high-mobility p-type transparent semiconductor (Nat. Electron. 2021, 4, 277-283), attracting significant attention. This "breakthrough" not only challenges the conventional…
Based on an unconventional Fermi liquid model, we present several results on the optimally doped and overdoped cuprate superconductors. For the normal state, we provide an analytic demonstration, backed by self-consistent Baym-Kadanoff (BK)…
We report on the direct probing of the Fermi surface in the bulk of the electron-doped superconductor Nd$_{2-x}$Ce$_x$CuO$_4$ at different doping levels by means of magnetoresistance quantum oscillations. Our data reveal a sharp qualitative…
We study the doping evolution of the electronic structure in the normal phase of high-$T_c$ cuprates. Electronic structure and Fermi surface of cuprates with single CuO$_2$ layer in the unit cell like La$_{2-x}$Sr$_x$CuO$_4$ have been…
The effect of Mg $\delta$-doping on the structural, electrical and optical properties of GaN grown $\textsl{via}$ metalorganic vapor phase epitaxy has been studied using transmission electron microscopy, secondary ion mass spectroscopy,…
Controlled modulation of electronic band structure in two-dimensional (2D) materials via doping is crucial for devices fabrication. For instance doped graphene has been envisaged for various applications like sensors, super-capacitors,…
By eliminating normal fabrication processes, we preserve the bulk insulating state of calcium-doped Bi2Se3 single crystals in suspended nanodevices, as indicated by the activated temperature dependence of the resistivity at low…
Superconducting SrTiO_{3-\delta} was obtained by annealing single crystalline SrTiO_3 samples in ultra high vacuum. An analysis of the V(I) characteristics revealed very small critical currents I_c which can be traced back to a unavoidable…
The significance of p-type transparent oxide semiconductors (TOS) in the semiconductor industry is paramount, driving advancements in optoelectronic technologies for transparent electronic devices with unique properties. The recent…
The recent achievement of superconductivity in La$_3$Ni$_2$O$_{7-\delta}$ with transition temperatures exceeding 40 K in thin films under compressive strain and 80 K in bulk crystals under high pressure opens new avenues for research on…
We demonstrate a fabrication scheme for clean suspended structures using chemical-vapor-deposition-grown graphene and a dry transfer method on lift-off-resist-coated substrates to facilitate suspended graphene nanoelectronic devices for…