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Related papers: Spin polarization in Lateral two-dimensional Heter…

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Single-layer transition-metal dichalcogenides provide an unique intrinsic entanglement between the spin/valley/orbital degrees of freedom and the polarization of scattered photons. This scenario gives rise to the well-assessed optical…

Materials Science · Physics 2025-01-13 Habib Rostami , Federico Cilento , Emmanuele Cappelluti

High degree of electron spin polarization is of crucial importance in operation of spintronic devices. We study the propagation of spin-polarized electrons through a boundary between two n-type semiconductor regions with different doping…

Mesoscale and Nanoscale Physics · Physics 2010-09-22 Yuriy V. Pershin , Vladimir Privman

The formation of a novel spin-polarized 2D electron gas at the LaMnO$_3$ monolayer embedded in SrMnO$_3$ is predicted from the first-principles density-functional calculations. The La (d) electrons become confined in the direction normal to…

Materials Science · Physics 2010-03-10 B. R. K. Nanda , S. Satpathy

We study perfect valley polarization in a molybdenum disulfide MoS2 nanoribbon monolayer using two bands Hamiltonian model and non-equilibrium Green's function method. The device consists of a one-dimensional quantum wire of MoS2 monolayer…

Mesoscale and Nanoscale Physics · Physics 2017-11-21 A. Heshmati , H. Simchi , M. Esmaeilzadeh

We have investigated optical orientation in the vicinity of the direct gap of bulk germanium. The electron spin polarization is studied via polarization-resolved photoluminescence excitation spectroscopy unfolding the interplay between…

Mesoscale and Nanoscale Physics · Physics 2015-06-11 Fabio Pezzoli , Andrea Balocchi , Elisa Vitiello , Thierry Amand , Xavier Marie

It is shown that absorption of circularly polarized infrared radiation due to intraband (Drude-like) transitions in n-type bulk semiconductors and due to intra-subband or inter-subband transitions in quantum well (QW) structures results in…

We propose a new scheme of spin filtering employing ballistic nanostructures in two dimensional electron gases (2DEGs). The proposal is essentially based on the spin-orbit (SO) interaction arising from the lateral confining electric field.…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 S. Bellucci , F. Carillo , P. Onorato

Three-dimensional topological insulators protected by both the time reversal (TR) and mirror symmetries were recently predicted and observed. Two-dimensional materials featuring this property and their potential for device applications have…

Mesoscale and Nanoscale Physics · Physics 2019-01-30 Carlos Mera Acosta , Adalberto Fazzio

The negatively charged boron vacancy ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN) has garnered significant attention among defects in two-dimensional materials. This owes, in part, to its deterministic generation,…

A one dimensional theory of lateral spin-polarized transport is derived from the two dimensional flow in the vertical cross section of a stack of ferromagnetic and paramagnetic layers. This takes into account the influence of the lead on…

Materials Science · Physics 2008-02-20 H. Dery , L. Cywinski , L. J. Sham

The coupled spin and valley degrees of freedom in transition metal dichalcogenides (TMDs) are considered a promising platform for information processing. Here, we use a TMD heterostructure ${\text{MoS}_{2}-\text{MoSe}_{2}}$ to study optical…

A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…

The effect of polarization rotation on the performance of metal oxide semiconductor field-effect transistors was investigated with a Landau-Ginzburg-Devonshire theory based model. In this analytical model, depolarization field, polarization…

Materials Science · Physics 2015-07-06 Yubo Qi , Andrew M. Rappe

The ordered magnetic states of MnWO4 at low temperatures were examined by evaluating the spin exchange interactions between the Mn2+ ions of MnWO4 on the basis of first principles density functional calculations and by performing classical…

Spin-polarized transport is investigated in normal metal-superconductor (NS) junctions as a function of interface transmissivity as well as temperature when the density of states of a superconductor is Zeeman-split in response to an…

Mesoscale and Nanoscale Physics · Physics 2008-04-03 F. Giazotto , F. Taddei

We suggest a new spin orientation mechanism for localized electrons: $dynamic~electron~spin~polarization~provided~by~nuclear~spin~fluctuations$. The angular momentum for the electrons is gained from the nuclear spin system via the hyperfine…

Mesoscale and Nanoscale Physics · Physics 2020-10-14 D. S. Smirnov , T. S. Shamirzaev , D. R. Yakovlev , M. Bayer

Two-dimensional materials and their heterostructures have opened up new possibilities for magnetism at the nanoscale. In this study, we utilize first-principles simulations to investigate the structural, electronic, and magnetic properties…

Materials Science · Physics 2022-10-11 Diem Thi-Xuan Dang , Ranjan Kumar Barik , Manh-Huong Phan , Lilia M. Woods

The investigation of excitons in van-der-Waals heterostructures has led to profound insights into the interplay of crystal symmetries and fundamental effects of light-matter coupling. In particular, the polarization selection rules in…

The bilayer heterostructures composed of an ultrathin ferromagnetic metal (FM) and a material hosting strong spin-orbit (SO) coupling are principal resource for SO torque and spin-to-charge conversion nonequilibrium effects in spintronics.…

Materials Science · Physics 2020-10-28 Kapildeb Dolui , Branislav K. Nikolic

We report a systematic study of the structure, electric and magnetic properties of Ca$_3$Co$_{2-x}$Mn$_x$O$_6$ single crystals with $x =$ 0.72 and 0.26. The DC and AC magnetic susceptibilities display anomalies with characteristic of the…

Materials Science · Physics 2017-09-08 J. Shi , J. D. Song , J. C. Wu , X. Rao , H. L. Che , Z. Y. Zhao , H. D. Zhou , J. Ma , R. R. Zhang , L. Zhang , X. G. Liu , X. Zhao , X. F. Sun