Related papers: Spin polarization in Lateral two-dimensional Heter…
Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of…
In spin-polarized bipolar transport both electrons and holes in doped semiconductors contribute to spin-charge coupling. The current conversion between the minority (as referred to carriers and not spin) and majority carriers leads to novel…
Spin injection efficiency based on conventional ferromagnet (or half-metallic ferromagnet) /semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors…
The spin polarization (P) of high-density InSb two-dimensional electron systems (2DESs) has been measured using both parallel and tilted magnetic fields. P is found to exhibit a superlinear increase with the total field B. This P-B…
We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin…
A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic…
We combined a spin-resolved photoemission spectrometer with a high-harmonic generation (HHG) laser source in order to perform spin-, time- and angle-resolved photoemission spectroscopy (STARPES) experiments on the transition metal…
A mesoscopic spin valve is used to determine the effective spin polarization of electrons tunneling from and into ferromagnetic transition metals at finite voltages. The tunneling spin polarization from the ferromagnet (FM) slowly decreases…
A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically-biased (Ga,Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by…
2D Ferroelectricity with switchable electric polarization has drawn widespread attention in condensed matter physics due to its crucial applications in non-volatile memory and ferroelectric spin devices. Despite recent progress in 2D…
Understanding non-equilibrium spin transport through 2D ferromagnets is a theoretical challenge, as correlations produce a complex electronic structure with coexisting itinerant and localized electrons. We have developed a fully…
We analyze the broad range of spin-dependent nonequilibrium transport properties of hybrid systems composed of a normal region tunnel coupled to two superconductors with exchange fields induced by the proximity to thin ferromagnetic layers…
Based on spin-charge coupled drift-diffusion equations, which are derived from kinetic equations for the spin-density matrix in a rigorous manner, the electric-field-induced nonequilibrium spin polarization is treated for a two-dimensional…
The hyperfine field from dynamically polarized nuclei in n-GaAs is very spatially inhomogeneous, as the nu- clear polarization process is most efficient near the randomly-distributed donors. Electrons with polarized spins traversing the…
We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near…
We determine the dynamic magnetization induced in non-magnetic metal wedges composed of silver, copper and platinum by means of Brillouin light scattering (BLS) microscopy. The magnetization is transferred from a ferromagnetic Ni80Fe20…
We consider a zigzag nanoribbon of MoS2 and study its spin-dependent conductance and spin-polarization in presence (absent) of an external electric field. The field is not only perpendicular to the molybdenum plane (called vertical field…
Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report…
Two-dimensional ferroelectrics can maintain vertical polarization up to room temperature, and are, therefore, promising for next-generation nonvolatile memories. Although natural two-dimensional ferroelectrics are few, moir\'{e}…
Chiral-induced spin selectivity (CISS) is a phenomenon in which electron spins are polarized as they are transported through chiral molecules, and the spin polarization depends on the handedness of the chiral molecule. In this study, we…