Related papers: Efficient field-free perpendicular magnetization s…
The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to…
Noncollinear antiferromagnets have promising potential to replace ferromagnets in the field of spintronics as high-density devices with ultrafast operation. To take full advantage of noncollinear antiferromagnets in spintronics…
Spin Hall effect plays an essential role in generating spin current from the injected charge current, following the Dyakonov-Perel rule that the directions of charge flow, spin flow and spin polarization are mutually perpendicular to each…
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…
Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current…
Spin-orbit coupling in ferromagnets gives rise to the anomalous Hall effect and the anisotropic magnetoresistance, both of which can be used to create spin-transfer torques in a similar manner as the spin Hall effect. In this paper we show…
Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient…
The orbital Hall effect (OHE) in light transition metals offers a promising route to generate orbital torques for efficient magnetization control, providing an alternative to conventional spin Hall effect approaches that rely on heavy…
The lack of certain crystalline symmetries in strong spin-orbit-coupled non-magnetic materials allows for the existence of uncoventional spin Hall responses, with electrically generated transverse spin currents possessing collinear flow and…
Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. In particular, an external magnetic field is required for…
The spin Hall effect (SHE) generates spin currents within nonmagnetic materials. Previously, studies of the SHE have been motivated primarily to understand its fundamental origin and magnitude. Here we demonstrate, using measurement and…
Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to…
Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The relative contributions of field-like torques and damping-like…
Antiferromagnets are promising candidates for next-generation spintronic devices owing to their negligible stray fields and ultrafast spin dynamics. The noncollinear antiferromagnet $\mathrm{Mn}_{3}\mathrm{Sn}$ exhibits a large anomalous…
Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density…
Recently orbital Hall current has attracted attention as an alternative method to switch the magnetization of ferromagnets. Here we present our findings on electrical switching of antiferromagnetic state in Mn3Sn/Cr, where despite the much…
In this work, we study magnetization switching induced by spin-orbit torque in W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer.…
Ferromagnetic metals, with the potential to generate spin current with unconventional spin polarization via the spin Hall effect, offer promising opportunities for field-free switching of perpendicular magnetization and for the spin-orbit…
Electrical control of the non-trivial topology in Weyl antiferromagnet is of great interests to develop next-generation spintronic devices. Recent works suggest that spin Hall effect can switch the topological antiferromagnetic order.…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…