Related papers: A high-sensitivity charge sensor for silicon qubit…
Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence…
Fast and high-fidelity qubit measurement is crucial for achieving quantum error correction, a fundamental element in the development of universal quantum computing. For electron spin qubits, fast readout stands out as a major obstacle in…
Quantum sensing with solid-state systems finds broad applications in diverse areas ranging from material and biomedical sciences to fundamental physics. Several solid-state spin sensors have been developed, facilitating the ultra-sensitive…
A single-spin qubit placed near the surface of a conductor acquires an additional contribution to its $1/T_1$ relaxation rate due to magnetic noise created by electric current fluctuations in the material. We analyze this technique as a…
Quantum thermometry leveraging quantum sensors is investigated with an emphasis on fundamental precision bounds derived from quantum estimation theory. The proposed sensing platform consists of two dissimilar qubits coupled via capacitor,…
We report observations of discrete charge states of a coherent dielectric two-level system (TLS) that is strongly coupled to an offset-charge-sensitive superconducting transmon qubit. We measure an offset charge of 0.072$e$ associated with…
We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double-dot symmetrically between the…
Squeezed light can exponentially increase the signal-to-noise ratio (SNR) of dispersive qubit readout, especially using a combination of injected external squeezing (IES) and intracavity squeezing (ICS). We further investigate whether IES…
Charge qubits formed in double quantum dots represent quintessential two-level systems that enjoy both ease of control and efficient readout. Unfortunately, charge noise can cause rapid decoherence, with typical single-qubit gate fidelities…
Employing spins in quantum dots for fault-tolerant quantum computing in large-scale qubit arrays with on-chip control electronics requires high-fidelity qubit operation at elevated temperature. This poses a challenge for single spin…
We solve the master equations of two charged qubits measured by a single-electron transistor (SET) consisted of two islands. We show that in the sequential tunneling regime the SET current can be used for reading out results of quantum…
We consider a system of two solid state charge qubits, coupled to a single read-out device, consisting of a single-electron transistor (SET). The conductance of each tunnel junction is influenced by its neighboring qubit, and thus the…
Current superconducting quantum computing platforms face significant scaling challenges, as individual signal lines are required for control of each qubit. This wiring overhead is a result of the low level of integration between control…
Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge…
Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we…
We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a…
A key virtue of spin qubits is their sub-micron footprint, enabling a single silicon chip to host the millions of qubits required to execute useful quantum algorithms with error correction. With each physical qubit needing multiple control…
We demonstrate a sensitive method of charge detection based on radio-frequency readout of the Josephson inductance of a superconducting single-electron transistor. Charge sensitivity $1.4 \times 10^{-4}e/\sqrt{Hz}$, limited by preamplifier,…
This paper demonstrates the use of voltage noise thermometry, with a cross-correlation technique, as a dissipation-free method of thermometry inside a CMOS integrated circuit (IC). We show that this technique exhibits broad agreement with…
We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals…