Related papers: Spin accumulation from non-equilibrium first princ…
Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Although first observed only a decade ago, these effects are already…
We present a linear response theory for stationary density accumulations in anomalous transport phenomena, such as the orbital Hall effect, where the transported density is odd under time reversal and the underlying charge is not conserved.…
The generation of spin and orbital currents is of crucial importance in the field of spin-orbitronics. In this work, using relativistic density functional theory and the Kubo linear-response formalism, we systematically investigate the spin…
The Hall effect, ever intriguing since its discovery, has spurred the exploration of its phenomena, intensified by advances in topology and novel materials. Differentiating the ordinary Hall effect from extraordinary properties like the…
We derive the transport equations for two-dimensional electron systems with spin-orbit interaction and short-range spin-independent disorder. In the limit of slow spatial variations of the electron distribution we obtain coupled diffusion…
The characterization of the stationary states in the spin-Hall effect is discussed within the framework of the phenomenological two spin-channel model. It is shown that two different definitions of the stationary states can be applied in…
We present an implementation of the steady state Keldysh approach in a Green's function multiple scattering scheme to calculate the non-equilibrium spin density. This density is used to obtain the spin transfer torque in junctions showing…
A solution of the modified Boltzmann transport equations is found, which describes features of the spin and charge transport in a solid. Two modifications of the Boltzmann transport equation were introduced. The first modification describes…
The direct electrical method was used to study the behavior of the spin Hall effect in a magnetic field perpendicular to the injection current in aluminum samples with resistivities that differed by two orders of magnitude at a temperature…
The spin phenomena observed at a clean metall-insulator interface are typically reduced to Rashba-Edelstein effect, that leads to spin accumulation over a few monolayers. We demonstrate that the presence of interface disorder significantly…
Based on the Keldysh formalism, the Boltzmann kinetic equation and the drift diffusion equation have been derived for studying spin polarization flow and spin accumulation under effect of the time dependent Rashba spin-orbit interaction in…
The generation and manipulation of carrier spin polarization in semiconductors solely by electric fields has garnered significant attention as both an interesting manifestation of spin-orbit physics as well as a valuable capability for…
Spin fluctuations have a substantial influence on the electron and lattice behaviors in magnetic materials, which, however, is difficult to be tracked properly by prevalent first-principles methods. We propose a versatile self-adaptive…
The electrical creation and detection of spin accumulation in ferromagnet/semiconductor Schottky contacts that exhibit highly non-linear and rectifying electrical transport is evaluated. If the spin accumulation in the semiconductor is…
Understanding possible mechanisms, which can lead to suppression of helical edge transport in Quantum Spin Hall (QSH) systems, attracted huge attention right after the first experiments revealing the fragility of the ballistic conductance.…
The interpretation of some recent measurements of spin-dependent voltage for which the electric conduction does not play a role rises some new fundamental questions about the effects of spin-dependent heat currents. A two spin-channel model…
Topological insulator (TI) thin films differ from the more commonly studied semi-infinite bulk TIs in that the former possesses both top and bottom surfaces where the surface states localized at different surfaces can couple to one another…
In Si, spin-phonon interaction is the primary spin relaxation mechanism. At low temperatures, the absence of spin-phonon relaxation will lead to enhanced spin accumulation. Spin accumulation may change the electro-thermal transport within…
The intrinsic spin Hall conductivity of typical topological insulators Sb$_2$Se$_3$, Sb$_2$Te$_3$, Bi$_2$Se$_3$, and Bi$_2$Te$_3$ in the bulk form, is calculated from first-principles by using density functional theory and the linear…
We study transport in ferromagnetic single-electron transistors. The non- equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances…