Related papers: Direct visualization of antiferroelectric switchin…
Nanoscale polarization switching in ferroelectric materials by Piezoresponse Force Microscopy (PFM) in weak and strong indentation limits is analyzed using exact solutions for electrostatic and coupled electroelastic fields below the tip.…
We demonstrate that the magnetization of a ferromagnet in contact with an antiferromagnetic multiferroic (LuMnO3) can be speedily reversed by electric field pulsing, and the sign of the magnetic exchange bias can switch and recover…
We report on the electric field control of magnetic phase transition temperatures in multiferroic Ni3V2O8 thin films. Using magnetization measurements, we find that the phase transition temperature to the canted antiferromagnetic state is…
The ability to manipulate ferroelectrics at ultrafast speeds has long been an elusive target for materials research. Coherently exciting the ferroelectric mode with ultrashort optical pulses holds the promise to switch the ferroelectric…
Pinning magnetization in a ferromagnetic thin film is commonly realized through exchange biasing with an adjacent antiferromagnet. Field-cooling from above the N\'{e}el temperature is a reliable yet slow re-pinning method in exchange-biased…
We report modifications of the ferroelectric and electrocaloric properties of BaTiO$_3$ by defects. For this purpose, we have combined \textit{ab initio}-based molecular dynamics simulations with a simple model for defects. We find that…
The control of multiferroic domains through external electric fields has been studied by dielectric measurements and by polarized neutron diffraction on single-crystalline TbMnO$_3$. Full hysteresis cycles were recorded by varying an…
The magnetocaloric effect in exchange-coupled synthetic-antiferromagnet multilayers is investigated experimentally and theoretically. We observe a temperature-controlled inversion of the effect, where the entropy increases on switching the…
Monitoring structural changes in ferroelectric thin films during electric field-induced polarization switching is important for a full microscopic understanding of the coupled motion of charges, atoms and domain walls. We combine standard…
Antiferromagnets (AFMs) are presently considered as promising materials for applications in spintronics and random access memories due to the robustness of information stored in AFM state against perturbing magnetic fields (P. Wadley et…
Giant electrocaloric (EC) effect is observed in BaTiO3 multilayer thick film structure. The temperature change is as high as 4.0 oC under an applied electric field of 352 kV/cm. Most importantly, the EC effect is found to depend on the…
Temperature evolution of dielectric response, atomic structure, and lattice dynamics in thin film of sodium niobate in the epitaxial NaNbO$_3$/SrRuO$_3$/(001)MgO heterostructure is studied by dielectric measurements, x-ray diffraction, and…
The limited operational range of phase transition-based luminescence thermometers necessitates the exploration of new host materials exhibiting first-order structural phase transitions to broaden the applicability of this approach.…
Infrared reflectance spectra of an epitaxial Bi2FeCrO6 thin film prepared by pulsed laser deposition on LaAlO3 substrate were recorded between 10 and 900 K. No evidence for a phase transition to the paraelectric phase was observed, but some…
Magnetoelastic and magnetoelectric coupling in the artificial multiferroic heterostructures facilitate valuable features for device applications such as magnetic field sensors and electric write magnetic-read memory devices. In a…
Temperature-induced phase transition in BaTiO3 has been explored using the machine learning analysis of domain morphologies visualized via variable-temperature scanning transmission electron microscopy (STEM) imaging data. This approach is…
Ferroelectric domain wall devices offer a promising route to low-voltage, reconfigurable nanoelectronics by confining currents to nanoscale conducting interfaces within an insulating bulk. However, the potential for resistive heating and…
Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the…
We report Electron Paramagnetic Resonance measurements on single crystalline and powder samples of Nd_0.5Ca_0.5MnO_3 across the charge-ordering transition at T_co=240 K down to the antiferromagnetic ordering transition at T_N = 140 K. The…
Multiferroic materials open up the possibility to design novel functionality in electronic devices, with low energy consumption. However, there are very few materials that show multiferroicity at room temperature, which is essential to be…