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We analyze a single-level quantum system placed between metallic leads and strongly coupled to a localized vibrational mode, which models a singlemolecule junction or an STM setup. We consider a polaron model describing the interaction…
Initial-switching refers to the way in which the decay of an initially confined state begins, as the barrier isolating it from the exterior is relaxed. We study these effects in the context of Longhi's version of the Fano-Anderson model.…
Resistive Random Access Memories (RRAMs) are being studied by the industry and academia because it is widely accepted that they are promising candidates for the next generation of high density nonvolatile memories. Taking into account the…
Medium voltage direct-current based integrated power system is projected as one of the solutions for powering the all-electric ship. It faces significant challenges for accurately energizing advanced loads, especially the pulsed power load,…
In this work, we aim to show that there are generally four possible mapping functions that can be used to map the time-domain or frequency-domain representations of an applied voltage input to the resulting time-domain or frequency-domain…
We investigate the distribution of the electron density and the potential in a quantum wire coupled to reservoirs, treating this structure as a unified quantum system and taking into account the Coulomb interaction of electrons. The…
Vortex flow in driven type II superconductors shows strong memory and history dependent effects. Here, we study a schematic microscopic model of driven vortices to propose a scenario for a broad set of these kind of phenomena ranging from…
This paper introduces a novel fractional-order chemostat model (FOCM) incorporating Caputo fractional derivative with sliding memory (CFDS) to capture microbial memory effects in biological water treatment, addressing limitations of…
The charge-memory effect, bistability and switching between charged and neutral states of a molecular junction, as observed in recent STM experiments, is considered within a minimal polaron model. We show that in the case of strong…
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…
The empirical valence bond (EVB) method [J. Chem. Phys. 52, 1262 (1970)] has always embodied charge transfer processes. The mechanism of that behavior is examined here and recast for use as a new empirical potential energy surface for…
The interplay between charge ordering and its manifestation in macroscopic electrical transport in low-dimensional materials is crucial for understanding resistive switching mechanisms. In this study, we investigate the electronic transport…
This paper studies the impacts of stochastic load fluctuations, namely the fluctuation intensity and the load power variation speed, on power system dynamic voltage stability. Additionally, the trade-off relationship between the two…
Nanoporous supercapacitors play an important role in modern energy storage systems, and their modeling is essential to predict and optimize the charging behaviour. Two classes of models have been developed that consist of finite and…
Renewable energy is critical for combating climate change, whose first step is the storage of electricity generated from renewable energy sources. Li-ion batteries are a popular kind of storage units. Their continuous usage through…
Dynamics of a system in general depends on its initial state and how the system is driven, but in many-body systems the memory is usually averaged out during evolution. Here, interacting quantum systems without external relaxations are…
Shaping codes are used to encode information for use on channels with cost constraints. Applications include data transmission with a power constraint and, more recently, data storage on flash memories with a constraint on memory cell wear.…
The calculation of the band-gap by density-functional theory (DFT) methods is examined by considering the behavior of the energy as a function of number of electrons. It is found that the incorrect band-gap prediction with most approximate…
We performed analytical calculations of the current-voltage and strain-voltage response of the heterostructure like "charged SPM tip electrode / gap / ionic-semiconductor film" caused by the local changes of (a) ions concentration…
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…