Related papers: Strange electrical transport: Colossal magnetoresi…
Colossal magnetoresistance (CMR) is commonly observed in magnetic semiconductors when an external magnetic field is applied, usually accompanied by anomalous resistivity peaks or humps which were previously considered as evidence of a…
Universality of the extraordinary Hall effect scaling was tested in granular three-dimensional Ni-SiO2 films across the metal-insulator transition. Three types of magnetotransport behavior have been identified: metallic, weakly insulating…
Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read-heads. We show that a colossal non-saturating linear…
We report the discovery of a giant out-of-plane coercivity in the Fe-doped Mn3Sn single crystals. The compound of Mn2.42Fe0.58Sn exhibits a series of magnetic transitions accompanying with large magnetic anisotropy and electric transport…
The manganite (La,Pr,Ca)MnO3 is well known for its micrometer scale phase separation into coexisting ferromagnetic metallic and antiferromagnetic insulating (AFI) regions. Fabricating bridges with widths smaller than the phase separation…
Intrinsic, two-dimensional (2D) ferromagnetic semiconductors are an important class of materials for spintronics applications. Cr$_2$X$_2$Te$_6$ (X = Si and Ge) semiconductors show 2D Ising-like ferromagnetism, which is preserved in…
High-quality single crystals of the half-Heusler compound DyNiSb were investigated for their low temperature thermodynamic and magnetotransport properties. Magnetic susceptibility, heat capacity, and electrical resistivity measurements…
We report the discovery of a metamagnetic phase transition in a polar antiferromagnet Ni$_3$TeO$_6$ that occurs at 52 T. The new phase transition accompanies a colossal magnetoelectric effect, with a magnetic-field-induced polarization…
We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the…
Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of…
We present a unique example of giant magnetoelectric effect in a conventional multiferroic HoMnO3, where polarization is very large (~56 mC/m2) and the ferroelectric transition temperature is higher than the magnetic ordering temperature by…
It is now widely accepted that the magnetic transition in doped manganites that show large magnetoresistance is a type of percolation effect. This paper demonstrates that the transition should be viewed in the context of the Griffiths phase…
We report results of the first studies on the magnetic and transport properties of a new material CeNiBi_2. The magnetic susceptibility exhibits a sharp peak at T_N = 6K, indicating an antiferromagnetic phase transition. This…
Mn3Si2Te6 is a ferrimagnetic topological nodal-line semiconductor that exhibits unconventional colossal magnetoresitance (CMR) behavior, with short-range spin fluctuations being potentially intimately linked to the emergent properties. In…
We report measurements on single crystals of orthorhombic CeNiGe2, which is found to exhibit highly anisotropic magnetic and transport properties. The magnetization ratio M(H//b)/M(H^b) at 2 K is observed to be about 18 at 4 T and the…
The acute sensitivity of the electrical resistance of certain systems to magnetic fields known as extreme magnetoresistance (XMR) has recently been explored in a new materials context with topological semimetals. Exemplified by WTe$_{2}$…
All-solid-state nanoscale devices capable of efficiently controlling a heat flow are crucial for advanced thermal management technologies. Here we predict a magnon-driven magnetothermal resistance (mMTR) effect in multilayers of…
The magnetoresistance as a function of temperature and field for atomically flat interfaces between 8 unit cells of LaAlO3 and SrTiO3 is reported. Anomalous anisotropic behavior of the magnetoresistance is observed below 30 K for…
Materials where localized magnetic moments are coupled to itinerant electrons, the so-called Kondo lattice materials, provide a very rich backdrop for strong electron correlations. They are known to realize many exotic phenomena, including…
A colossal electroresistance effect is observed around room temperature in a transition metal oxide LuFe2O4. The measurements of resistance under various applied voltages as well as the highly nonlinear current-voltage characteristics…