Related papers: Cryogenic GaAs high-electron-mobility-transistor a…

This paper presents an analysis of GaN high-electron-mobility transistors (HEMTs) using both TCAD simulation and experimental characterization. The energy band structure was studied using Nextnano simulation software to observe…

Superconducting quantum computers have emerged as a leading platform for next-generation computing, offering exceptional scalability and unprecedented computational speeds. However, scaling these systems to millions of qubits for practical…

Quantum physics emerge and develop as temperature is reduced. Although mesoscopic electrical circuits constitute an outstanding platform to explore quantum behavior, the challenge in cooling the electrons impedes their potential. The strong…

Microwave receivers using electromagnetically-induced transparency (EIT) in Rydberg atoms have recently demonstrated improved sensitivities. It is not evident how their state-of-the-art electric field sensitivities compare to those achieved…

The CCAT Observatory's Fred Young Submillimeter Telescope (FYST) is designed to observe submillimeter astronomical signals with high precision, using receivers fielding state-of-the-art kinetic inductance detector (KID) arrays. Mod-Cam, a…

Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence…

Possible light bosonic dark matter interactions with the Standard Model photon have been searched by microwave resonant cavities. In this paper, we demonstrate the cryogenic readout system calibration of a 7.138 GHz copper cavity with a…

In this paper, we have characterized an AlGaN/GaN High Electron Mobility Transistor (HEMT) with a short gate length (Lg $\approx$ 0.15$\mu$m). We have studied the effect of short gate length on the small signal parameters, linearity…

Although the electrical transport properties of mesoscopic metallic samples have been investigated extensively over the past two decades, the thermal properties have received far less attention. This may be due in part to the difficulty of…

Experiments performed at a temperature of a few millikelvin require effective thermalization schemes, low-pass filtering of the measurement lines and low-noise electronics. Here, we report on the modifications to a commercial dilution…

This paper proposes a low-power and low-noise instrumentation amplifier (IA) tailored for bioimpedance sensing applications. The design originates from a gain-boosted flipped voltage follower (FVF) transconductance (TC) stage and integrates…

We present the design and implementation of a mechanical low-pass filter vibration isolation used to reduce the vibrational noise in a cryogen-free dilution refrigerator operated at 10 mK, intended for scanning probe techniques. We discuss…

We studied noise properties of microwave signals transmitted through the cryogenic resonator. The experiments were performed with the 11.342 GHz sapphire loaded cavity resonator cooled to 6.2 K. Based on the measured transmission…

We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 K to 60 K. A large variety of noise spectra, from 1/f to…

We study a frequency-dependent noise-to-current ratio for asymmetric, symmetric, and noncommutative current-noise in a ferromagnetic insulating junction, and extract quantum-mechanical properties of magnon transport at low temperatures. We…

We present a compact current sensor based on a superconducting microwave lumped-element resonator with a nanowire kinetic inductor, operating at 4.2 K. The sensor is suitable for multiplexed readout in GHz range of large-format arrays of…

Squeezing the quadrature noise of a harmonic oscillator used as a sensor can enhance its sensitivity in certain measurment schemes. The canonical approach, based on parametric modulation of the oscillation frequency, is usually limited to a…

We investigate the influence of AlN buffer thickness on the structural, electrical, and thermal properties of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on semi-insulating SiC substrates by metal-organic chemical vapor…

This paper discusses how classical transport theories such as the thermionic emission, can be used as a powerful tool for the study and the understanding of the most complex mechanisms of transport in Fin Field Effect Transistors (FinFETs).…

In this paper we describe an acoustic transceiver developed for the KM3NeT positioning system. The acoustic transceiver is composed of a commercial free flooded transducer, which works mainly in the 20-40 kHz frequency range and withstands…