Related papers: Thermal stress modelling of diamond on GaN/III-Nit…
Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is…
New properties can arise at van der Waals (vdW) interfaces hosting a moir\'e pattern generated by interlayer twist and strain. However, achieving precise control of interlayer twist/strain remains an ongoing challenge in vdW heterostructure…
Diamond samples of defects with negative charged nitrogen-vacancy (NV) centers are promising solid state spin sensors suitable for quantum information processing, high sensitive measurements of magnetic, electric and thermal fields in…
Temperature sensing at the nanoscale is a significant experimental challenge. Here, we report an approach using dressed states to make a leading quantum sensor (the nitrogen vacancy (NV) center in diamond) selectively sensitive to…
Long-term corrosion of glass is studied using polarising light microscopy, FTIR and SEM including EDX and elemental mapping. Early 19th century beads made of lead-potassium glass are the object of the study. Non-uniformly distributed…
The theoretical basis of the thermal response of the fluid-saturated porous materials in undrained condition is presented. It has been demonstrated that the thermal pressurization phenomenon is controlled by the discrepancy between the…
Diamond is one of the most studied materials because of its unique combination of remarkable electrical, mechanical, thermal and optical properties. Using a fully self-consistent ab initio theory of coupled electron-phonon transport, we…
We study the effect of localized Joule heating on the mechanical properties of doubly clamped nanowires under tensile stress. Local heating results in systematic variation of the resonant frequency; these frequency changes result from…
The transferred-electron oscillator (TEO) is a device used in microwave applications that utilizes the negative differential mobility (NDM) effect to generate continuous oscillations. Recently, NDM was observed in intrinsic…
Using atomistic simulations we investigate the thermodynamical properties of a single atomic layer of hexagonal boron nitride (h-BN). The thermal induced ripples, heat capacity, and thermal lattice expansion of large scale h-BN sheets are…
Semiconductor nanocrystals (NCs) experience stress and charge transfer by embedding materials or ligands and impurity atoms. In return, the environment of NCs experiences a NC stress response which may lead to matrix deformation and…
Part I shows that quantitative measurements of heat capacity are theoretically possible inside diamond anvil cells via high-frequency Joule heating (100 kHz to 10 MHz), opening up the possibility of new methods to detect and characterize…
The temperature dependence of the magnetic resonance spectra of nitrogen-vacancy (NV-) ensembles in the range of 280-330 K was studied. Four samples prepared under different conditions were studied with NV- concentrations ranging from 10…
Thermomechanical infrared (IR) detectors have emerged as promising alternatives to traditional photon and thermoelectric sensors, offering broadband sensitivity and low noise without the need for cryogenic cooling. Despite recent advances,…
We present tight-binding molecular dynamics simulations of the structural modifications that result from the "thermal spike" that occurs during the passage of a heavy fast ion through a thin diamond or amorphous carbon layer, and the…
The development of thermal stresses inside refractory ceramics experiencing severe thermal shock is studied. The present analysis departs from the linear theory of thermal stresses as it accounts for temperature dependent thermal and…
III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium gallium nitride light emitting diodes have been successfully produced…
Vapor growth of semiconductors is analyzed using recently obtained dependence of the adsorption energy on the electron charge transfer between the surface adsorbed species and the bulk [Krukowski et al. J. Appl. Phys. 114 (2013) 063507,…
Automatically monitoring and quantifying stress-induced thermal dynamic information in real-world settings is an extremely important but challenging problem. In this paper, we explore whether we can use mobile thermal imaging to measure the…
A thermocouple of Au-Ni with only 2.5-micrometers-wide electrodes on a 30-nm-thick Si3N4 membrane was fabricated by a simple low-resolution electron beam lithography and lift off procedure. The thermocouple is shown to be sensitive to heat…