Related papers: Thermal stress modelling of diamond on GaN/III-Nit…
To achieve high device performance and high reliability for the gallium nitride (GaN)-based high electron mobility transistors (HEMTs), efficient heat dissipation is important but remains challenging. Enormous efforts have been made to…
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless communication and radar systems. However, the performance and…
During electrostatic bonding, also known as anodic bonding, silicon is bonded to glass by applying an external voltage and simultaneous heating to temperatures of 200...450 $\deg$C. While cooling to working temperature after bonding…
The maximum output power of GaN-based high-electron mobility transistors is limited by high channel temperature induced by localized self-heating which degrades device performance and reliability. With generated heat fluxes within these…
Many modern applications, including quantum computing and quantum sensing, use substrate-film interfaces. Particularly, thin films of chromium or titanium and their oxides are commonly used to bind various structures, such as resonators,…
We have measured the thermal properties of suspended membranes from 10 K to 300 K for two amplitudes of internal stress (about 0.1 GPa and 1 GPa) and for two different thicknesses (50 nm and 100 nm). The use of the original 3 \omega…
A suspended system for measuring the thermal properties of membranes is presented. The sensitive thermal measurement is based on the 3$\omega$ dynamic method coupled to a V$\ddot{o}$lklein geometry. The device obtained using micro-machining…
Nitrogen-Vacancy centers in diamond possess an electronic spin resonance that strongly depends on temperature, which makes them efficient temperature sensor with a sensitivity down to a few mK/$\sqrt{\rm Hz}$. However, the high thermal…
The emission intensity of diamond samples containing nitrogen-vacancy centres are measured as a function of magnetic field along a <111> direction for various temperatures. At low temperatures the responses are sample and stress dependent…
Thermal properties of graphene display peculiar characteristics associated to the two-dimensional nature of this crystalline membrane. These properties can be changed and tuned in the presence of applied stresses, both tensile and…
The residual stress induced in assembly is a common concern in electronic packaging. The mismatch in coefficient of thermal expansion between borosilicate glass and silicon, upon temperature variation, generates an internal stress state.…
The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, which describe the direction and magnitude of…
The nitrogen-vacancy (NV) centers in diamond sensing has been considered to be a promising micro-nano scale thermometer due to its high stability, good temperature resolution and integration. In this work, we fabricated the sensing core by…
It is claimed that all of the pressure scales of the reported melting curves derived by diamond anvil cell experiments require a correction which takes into account the pressure thermal shift, where vanadium is an illustrative example. The…
Gallium nitride (GaN) is a typical wide-bandgap semiconductor with a critical role in a wide range of electronic applications. Ballistic thermal transport at nanoscale hotspots will greatly reduce the performance of a device when its…
Control of the crystalline orientation of nitrogen-vacancy (NV) defects in diamond is here demonstrated by tuning the temperature of chemical vapor deposition (CVD) growth on a (113)-oriented diamond substrate. We show that preferential…
The ultrathin one-dimensional sp3 diamond nanothreads (NTHs), as successfully synthesised recently, have greatly augmented the interests from the carbon community. In principle, there can exist different stable NTH structures. In this work,…
Temperature increase in saturated porous materials under undrained conditions leads to thermal pressurization of the pore fluid due to the discrepancy between the thermal expansion coefficients of the pore fluid and of the solid matrix.…
Stresses caused by thermal expansion coefficients mismatch of anodically bonded glass and silicon samples are studied. An analytical model to determine graphically the optimum bonding temperature is presented. It is essentially a model for…
Two-dimensional layered trichalcogenide materials have recently attracted the attention of the scientific community because of its robust mechanical, thermal properties and applications in opto and nanoelectronics devices. We report the…