Related papers: Fully Spin-transparent magnetic interfaces enabled…
Non-volatile flip-flops (NVFFs) using power gating techniques promise to overcome the soaring leakage power consumption issue with the scaling of CMOS technology. Magnetic tunnel junction (MTJ) is a good candidate for constructing the NVFF…
We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the…
Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of…
The interface between a ferro-/ferrimagnetic insulator and a normal metal can support spin currents polarized collinear with and perpendicular to the magnetization direction. The flow of angular momentum perpendicular to the magnetization…
The spin- and energy-dependent interface reflectivity of a ferromagnetic (FM) film in contact with a nonmagnetic (NM) film is calculated using a first-principles transport method and incorporated into the superdiffusive spin transport model…
We measure the spin-charge interconversion by the spin Hall effect in ferromagnetic/Pt nanodevices. The extracted effective spin Hall angles (SHAs) of Pt evolve drastically with the ferromagnetic (FM) materials (CoFe, Co, and NiFe), when…
We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we…
Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-\delta}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition…
Light transition metals have recently emerged as a sustainable material class for efficient spin-charge interconversion. We report measurements of current-induced spin-orbit torques generated by Ni$_{1-x}$Cu$_{x}$ alloys in perpendicularly…
Magnetic topological insulators and their heterostructures provide great opportunities in coupling band topology with nontrivial spin configuration for enhanced spintronic device performance as well as designing totally new magnetoelectric…
Nickel oxide (NiO) has been studied extensively for various applications ranging from electrochemistry to solar cells [1,2]. In recent years, NiO attracted much attention as an antiferromagnetic (AF) insulator material for spintronic…
Interfaces between heavy metals (HMs) and antiferromagnetic insulators (AFIs) have recently become highly investigated and debated systems in the effort to create spintronic devices able to function at terahertz frequencies. Such…
Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating…
The 5d transition-metal oxides have a unique electronic structure dominated by strong spin-orbit coupling and hence they can be an intriguing platform to explore spin-current physics. Here, we report on room-temperature generation of…
We systematically survey on Pt$_{x}$Cu$_{1-x}$/Co/MgO magnetic heterostructure with perpendicular magnetic anisotropy and report a significant improvement on spin-orbit torque switching efficiency in Pt-Cu alloy system. The largest…
We investigate the spin Hall magnetoresistance in thin film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO. While rotating an external magnetic field in the easy plane of NiO, we record the…
Spin-orbit torque (SOT) enables efficient current-driven control of magnetization, offering a promising pathway toward low-power spintronic devices. However, the origin and propagation of both damping-like (DL) and field-like (FL) SOTs in…
Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver…
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces…
Oxidation strongly influences the properties of magnetic layers employed in spintronic devices. We study the effect of oxidation on the structural, magnetic, and electrical properties as well as current-induced spin-orbit torques (SOTs) in…