Related papers: Electroabsorption in gated GaAs nanophotonic waveg…
The loss of surface plasmon polaritons has long been considered as a fatal shortcoming in information transport. Here we propose a plasmonic absorber utilizing this "shortcoming" to absorb the stray light in photonic integrated circuits…
Embedding a double barrier resonant tunnelling diode (RTD) in an unipolar InGaAlAs optical waveguide gives rise to a very low driving voltage electroabsorption modulator (EAM) at optical wavelengths around 1550 nm. The presence of the RTD…
High-speed back-illuminated uni-traveling-carrier photodiodes at 1064nm were demonstrated grown on InP with 3dB bandwidth of 17.8 GHz at -5 V bias, using InGaAsP as absorption layer. PDs with 40um diameter deliver RF output power levels as…
We demonstrate THz intersubband absorption (15.6-26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift…
Bandgap engineering in semiconductors is required for the development of photonic and optoelectronic devices with optimized absorption and emission energies. This is usually achieved by changing the chemical or structural composition during…
We measured the single-photon detection efficiency of NbN superconducting single photon detectors as a function of the polarization state of the incident light for different wavelengths in the range from 488 nm to 1550 nm. The polarization…
A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in…
We have investigated experimentally and theoretically the far-infrared (FIR) absorption of gated, deep-mesa-etched GaAs/Al$_x$Ga$_{1-x}$As quantum wires. To overcome Kohn's theorem we have in particular prepared double-layered wires and…
The temperature increase and temperature gradients induced by mid-infrared laser illumination of vertical gold nanoantenna arrays embedded into polymer layers was measured directly with a photothermal expansion nanoscope. Nanoscale thermal…
A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated electronic band structure model are used to ensure accurate…
We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR)…
The integration of coherent quantum emitters with silicon photonic platforms essential for scalable quantum technologies. We demonstrate electrically controlled self-assembled quantum dots embedded in GaAs waveguides bonded onto a SiO2/Si…
The development of spintronic technology with increasingly dense, high-speed, and complex devices will be accelerated by accessible microscopy techniques capable of probing magnetic phenomena on picosecond time scales and at deeply…
We measure the temperature dependence of the two-photon absorption and optical Kerr nonlinearity of a silicon waveguide over a range of temperatures from 5.5 to 300 K at a wavelength of 1.55 {\mu}m. The two-photon absorption coefficient is…
We experimentally study the dispersion relation of waves in a two-dimensional (2D) defect layer with periodic nanopores that sits on a three-dimensional (3D) photonic band gap crystal made from silicon by CMOS-compatible methods. The…
Electromagnetic waves propagating in a layered superconductor with arbitrary momentum with respect to the main crystallographic directions display an unavoidable mixing between longitudinal and transverse degrees of freedom. Here we show…
The nonlinear absorption of radio waves (200 - 800 MHz) in a noncollinear cubic antiferromagnet Mn3Al2Ge3O12 in an external magnetic field H || [001] has been studied in the temperature range of 1.2 - 4.2 K. We attribute the observed…
By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. We extend the room-temperature emission wavelength above ~4.0…
The problem of diffraction of a waveguide mode by a thin Neumann screen is considered. The incident mode is assumed to have frequency close to the cut-off. The problem is reduced to a propagation problem on a branched surface and then is…
For a one-dimensional electron-phonon system we consider the photon absorption involving electronic excitations within the pseudogap energy range. In the framework of the adiabatic approximation for the electron - phonon interactions these…