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Magnetic defects play an important, but poorly understood, role in magnetic topological insulators (TIs). For example, topological surface transport and bulk magnetic properties are controlled by magnetic defects in Bi$_2$Se$_3$-based…
MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ are antiferromagnetic topological insulators belonging to the MnBi$_{2n}$Te$_{3n+1}$ series, where structural layering provides a natural route to tune magnetic interaction in van der Waals magnets. Despite…
MnBi$_2$Te$_4$, a two-dimensional magnetic topological insulator with a uniaxial antiferromagnetic structure, is an ideal platform to realize quantum anomalous Hall effect. However, the strength of magnetic interactions is not clear yet. We…
Bulk MnBi$_2$Te$_4$ (MBT) is an intrinsic antiferromagnetic topological insulator. However, its low N\'eel temperature of $\sim 25\,\mathrm{K}$ severely restricts its practical applications. Here, we propose a van der Waals heterostructure…
Crystal growth of MnBi$_{2}$Te$_{4}$ has delivered the first experimental corroboration of the 3D antiferromagnetic topological insulator state. Our present results confirm that the synthesis of MnBi$_{2}$Te$_{4}$ can be scaled-up and…
The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in…
The layered magnetic topological insulator MnBi$_2$Te$_4$ is a promising platform to realize the quantum anomalous Hall effect because its layers possess intrinsic ferromagnetism. However, it is not well understood why the high-spin $d^5$…
The intricate interplay between nontrivial topology and magnetism in two-dimensional (2D) materials has led to the emergence of many novel phenomena and functionalities. An outstanding example is the quantum anomalous Hall (QAH) effect,…
Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering…
Elemental substitution is a proven method of Fermi level tuning in topological insulators, which is needed for device applications. Through static and time resolved photoemission, we show that in MnBi$_2$Te$_4$, elemental substitution of Bi…
Using single crystal neutron diffraction, we present a systematic investigation of the crystal structure and magnetism of van der Waals topological insulators MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$, where rich topological quantum states have…
The antiferromagnetic topological insulator has attracted lots of attention recently, as its intrinsic magnetism and topological property makes it a potential material to realize the quantum anomalous Hall effect (QAHE) at relative high…
The quantum anomalous Hall effect in layered antiferromagnet MnBi$_2$Te$_4$ harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic…
Monolayer MnBi$_{2}$Te$_{4}$ (MBT) is an intrinsically magnetic topological insulator whose magnetic response is strongly affected by strain and electron correlation. In density functional theory with an on-site Hubbard correction…
MnBi2nTe3n+1(MBT) is the first intrinsic magnetic topological insulator and is promising to hostemergent phenomena such as quantum anomalous Hall effect. They can be made ferromagnetic by having n >= 4 or with Sb doping. We studied the…
MnBi2Te4 (MBT) is the first intrinsic magnetic topological insulator with the interaction of spin-momentum locked surface electrons and intrinsic magnetism, and it exhibits novel magnetic and topological phenomena. Recent studies suggested…
The intrinsic magnetic topological insulator MnBi2Te4 (MBT) has provided a platform for the successful realization of exotic quantum phenomena. To broaden the horizons of MBT-based material systems, we intercalate ferromagnetic MnTe layers…
The Mn-Bi-Te family displaying magnetism and non-trivial topological properties has received extensive attention. Here, we predict that the antiferromagnetic structure of Mn$_{3}$Bi$_{2}$Te$_{6}$ with three MnTe layers is energetically…
It is shown that the experimentally detected features in the low-temperature behavior of the magnetization in an external magnetic field perpendicular to the layers of manganese ions of the topological antiferromagnet MnBi$_2$Te$_4$ are due…
The discovery of an intrinsic antiferromagnetic topological insulator (AFM-TI) in MnBi$_2$Te$_4$ has attracted intense attention, most of which lies on its electrical properties. In this paper, we report electronic, thermal, and…