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Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized…
We propose a new network architecture for standard spin-Hall magnetic tunnel junction-based spintronic neurons that allows them to compute multiple critical convolutional neural network functionalities simultaneously and in parallel, saving…
In-memory computing (IMC) is an effectual solution for energy-efficient artificial intelligence applications. Analog IMC amortizes the power consumption of multiple sensing amplifiers with analog-to-digital converter (ADC), and…
Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently,…
We review two magnetic tunnel junction (MTJ) approaches for compact, low-power, CMOS-integrated true random number generation (TRNG). The first employs passive-read, easy-plane superparamagnetic MTJs (sMTJs) that generate…
The desire to empower resource-limited edge devices with computer vision (CV) must overcome the high energy consumption of collecting and processing vast sensory data. To address the challenge, this work proposes an energy-efficient…
Straintronic magneto-tunneling junction (s-MTJ) switches, whose resistances are controlled with voltage-generated strain in the magnetostrictive free layer of the MTJ, are extremely energy-efficient switches that would dissipate a few aJ of…
Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible…
Brain-inspired computing architectures attempt to mimic the computations performed in the neurons and the synapses in the human brain in order to achieve its efficiency in learning and cognitive tasks. In this work, we demonstrate the…
Magnetic tunnel junctions (MTJs) play a crucial role in spintronic applications, particularly data storage and sensors. Especially as a non-volatile memory, MTJs have received substantial attention due to its CMOS compatibility, low power…
Magnetic tunnel junctions (MTJs) are key elements in practical spintronics, enabling not only conventional tasks such as data storage, transmission, and processing but also the implementation of compute-in-memory processing elements,…
Dream of developing molecule-based logic and memory device is more than 70-year-old. Presently, molecule-based devices are also considered for quantum computation hardware. The recent studies have shown the molecule connected to metal leads…
With the rise in in-memory computing architectures to reduce the compute-memory bottleneck, a new bottleneck is present between analog and digital conversion. Analog content-addressable memories (ACAM) are being recently studied for…
Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free…
Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…
Low-power designs are a necessity with the increasing demand of portable devices which are battery operated. In many of such devices the operational speed is not as important as battery life. Logic-in-memory structures using nano-devices…
Ensuring high performance, while meeting the power budget is a challenging task as the world is moving towards next-generation computing. Researchers and designers are in search of new solutions for efficient computation. Spintronics…
Analog memory is of great importance in neurocomputing technologies field, but still remains difficult to implement. With emergence of memristors in VLSI technologies the idea of designing scalable analog data storage elements finds its…
Owing to high device density, scalability and non-volatility, Magnetic Tunnel Junction-based crossbars have garnered significant interest for implementing the weights of an artificial neural network. The existence of only two stable states…
The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…