Related papers: Quantum Transport in Two-Dimensional WS$_2$ with H…
Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron…
Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical…
A multiscale simulation approach is developed to simulate the contact transport properties between semimetal to a monolayer two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductor. The results elucidate the mechanisms for…
Monolayers of transition metal dichalcogenides (TMDCs) exhibit excellent electronic and optical properties. However, the performance of these two-dimensional (2D) devices are often limited by the large resistance offered by the metal…
Quantum correlation and hot-carrier transport represent two fundamentally distinct regimes of electronic conduction, rarely accessible within the same device. Here, we report a state-of-the-art monolayer transition metal dichalcogenides…
The formation of an ideal van der Waals (vdW) contacts at metal/transition-metal dichalcogenide (TMDC) interfaces is a critical step for the development of high-performance and energy-efficient electronic and optoelectronic applications…
Two-dimensional transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, yet their implementation is hindered by limited sample stability and challenges in forming reliable electrical…
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal…
Transition-metal dichalcogenides (TMDCs) are important class of two-dimensional (2D) layered materials for electronic and optoelectronic applications, due to their ultimate body thickness, sizable and tunable bandgap, and decent theoretical…
Two recent electronic transport experiments from Columbia University and Harvard University have reported record high mobility and low channel densities in transition metal dichalcogenide (TMD) WSe$_2$ monolayers [J. Pack, et al.,…
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) remain a topic of immense interest. Specifically, given their low operational switching costs, they find many niche applications in new computing architectures with the promise…
High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field…
The two-dimensional transition metal dichalcogenides (TMDs) have been proposed as candidates for the channel material in future field effect transistor designs. The heterophase design which utilizes the metallic T- or T' phase of the TMD as…
We describe the nature of charge transport at non-zero temperatures ($T$) above the two-dimensional ($d$) superfluid-insulator quantum critical point. We argue that the transport is characterized by inelastic collisions among thermally…
Using density-functional theory calculations, the atomic and electronic structure of single-layer WS_2 attached to Zr and Co contacts are determined. Both metals form stable interfaces that are promising as contacts for injection of n-type…
The metal-semiconductor contact is a major factor limiting the shrinking of transistor dimension to further increase device performance. In-plane edge contacts have the potential to achieve lower contact resistance due to stronger orbital…
We demonstrated n-type and p-type carrier injections into a transition metal dichalcogenide (TMD) WSe2 using van der Waals (vdW) contacts of two-dimensional (2D) materials: graphite for an n-type contact and NbSe2 for a p-type contact.…
In this study, we investigate the conductivity of a two-dimensional (2D) system in HgTe quantum well comprising two types of carriers with linear and quadratic spectra, respectively. The interactions between the two-dimensional Dirac holes…
Increasing demands for renewable sources of energy has been a major driving force for developing efficient thermoelectric materials. Two-dimensional (2D) transition-metal dichalcogenides (TMDC) have emerged as promising candidates for…
Spatial confinement and manipulation of charged carriers in semiconducting nanostructures are essential for realizing quantum electronic devices. Gate-defined nanostructures made of two-dimensional (2D) semiconducting transition metal…