Related papers: Nearly ideal memristive functionality based on vis…
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one…
We present a simple and fast method to simulate spin-torque driven magnetisation dynamics in nano-pillar spin-valve structures. The approach is based on the coupling between a spin transport code based on random matrix theory and a…
The synapse is a key element of neuromorphic computing in terms of efficiency and accuracy. In this paper, an optimized current-controlled memristive synapse circuit is proposed. Our proposed synapse demonstrates reliability in the face of…
In 2008, researchers at HP Labs published a paper in {\it Nature} reporting the realisation of a new basic circuit element that completes the missing link between charge and flux-linkage, which was postulated by Leon Chua in 1971. The HP…
The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of-art metal-oxide memristive device based on yttria-stabilized zirconium dioxide and tantalum pentoxide, which exhibits bipolar filamentary…
In this work, an optimized method was implemented for attaining stable multibit operation with low energy consumption in a two-terminal memory element made from the following layers: Ag/Pt nanoparticles (NPs)/SiO2/TiN in a…
Ferromagnetic substrate influences the electromagnetic response of a type-II superconducting film to the applied magnetic field. We present a two-dimensional integrodifferential model for the magnetization of a flat…
Memristors have shown promising features for enhancing neuromorphic computing concepts and AI hardware accelerators. In this paper, we present a user-friendly software infrastructure that allows emulating a wide range of neuromorphic…
Memristors provide a tempting solution for weighted synapse connections in neuromorphic computing due to their size and non-volatile nature. However, memristors are unreliable in the commonly used voltage-pulse-based programming approaches…
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing…
In this paper a novel neuro-fuzzy system is proposed where its learning is based on the creation of fuzzy relations by using new implication method without utilizing any exact mathematical techniques. Then, a simple memristor crossbar-based…
Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration,…
Temporal modulation unlocks possibilities to dynamically control and modify the response of electromagnetic systems. Employing explicit dependencies of circuit or surface parameters on time enables the engineering of systems with…
It is generally impossible to separately measure the resistance of the functional component (i.e., the intrinsic device materials) and the parasitic component (i.e., terminals, interfaces and serial loads) in a two-terminal device. Yet such…
We report simulation of nanostructured memristor device using piecewise linear and nonlinear window functions for RRAM and neuromorphic applications. The linear drift model of memristor has been exploited for the simulation purpose with the…
Recent years have seen a rapid rise of artificial neural networks being employed in a number of cognitive tasks. The ever-increasing computing requirements of these structures have contributed to a desire for novel technologies and…
We construct an exactly solvable circuit of interacting memristors and study its dynamics and fixed points. This simple circuit model interpolates between decoupled circuits of isolated memristors, and memristors in series, for which exact…
We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the two magnetic electrodes in in-plane magnetized tunnel…
In this paper, we investigate few memristor-based analog circuits namely the phase shift oscillator, integrator, and differentiator which have been explored numerously using the traditional lumped components. We use LTspice-IV platform for…
Memristive reservoirs draw inspiration from a novel class of neuromorphic hardware known as nanowire networks. These systems display emergent brain-like dynamics, with optimal performance demonstrated at dynamical phase transitions. In…