Related papers: Voltage-controlled antiferromagnetism in magnetic …
Stemming from antiferromagnetic coupling, exchange bias allows inverted hysteresis in a magnetic system. Such room temperature magnetic reversal has yet to be observed in an amorphous antiferromagnet. Furthermore, the impact of this…
Spin-resolved electron symmetry filtering is a key mechanism behind giant tunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunnel junctions (MTJs), providing room temperature functionality in modern spin electronics.…
We demonstrate that the interfacial exchange coupling in ferromagnetic/antiferromagnetic (FM/AFM) systems induces symmetry-breaking of the Spin-Orbit (SO) effects. This has been done by studying the field and angle dependencies of…
We investigated the dependence of giant tunnel magnetoresistance (TMR) on the thickness of an MgO barrier and on the annealing temperature of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions deposited on SiO2/Si wafers. The…
A small amount of Fe (5% and 7.5%) substitution in the Cr-site of the multiferroic compound CoCr2O4 leads to a magnetization reversal. In these compounds, we report a sign change in the exchange bias across the compensation temperature,…
Van der Waals (vdW) magnetic heterostructures offer a versatile platform for engineering interfacial spin interactions with atomic precision, enabling nontrivial spin textures and dynamic behaviors. In this work, we report robust asymmetric…
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is…
A study of the multilayer system MgO/CoFeB(1.1nm)/Ta($t$)/CoFeB(0.8nm)/MgO is presented, where the two CoFeB layers are separated by a Ta interlayer of varying thickness $t$. The magnetization properties deduced from complementary…
We study the magnetic properties of cylindrical ferromagnetic core - antiferromagnetic shell nanowires using Monte Carlo simulations and a classical Heisenberg Hamiltonian in order to elucidate the impact of the oxidized shell on the…
The inverse magnetocaloric effect taking place at the antiferro-to-ferromagnetic transition of (Co,Fe)MnP phosphides has been characterized by magnetic and direct {\Delta}Tad measurements. In Co0.53Fe0.47MnP, entropy change of 1.5 Jkg-1K-1…
Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdOX barrier and the coupling mechanism in these…
Electric-field control of magnetism provides a promising route towards ultralow power information storage and sensor technologies. The effects of magneto-ionic motion have so far been prominently featured in the direct modification of…
The perpendicular magnetic anisotropy at the Co/oxide interface in Pt/Co/MOx (MOx = MgOx, AlOx, TbOx) was modified by an electric field using a 10 nm-thick ZrO2 as a solid electrolyte. The large voltage-driven modification of interfacial…
We have investigated exchange bias effects in bilayers composed by the antiferromagnetic o-YMnO$_3$ and ferromagnetic Co thin film by means of SQUID magnetometry, magnetoresistance, anisotropic magnetoresistance and planar Hall effect. The…
Positive exchange bias has been observed in the Ni$_{81}$Fe$_{19}$/Ir$_{20}$Mn$_{80}$ bilayer system via soft x-ray resonant magnetic scattering. After field cooling of the system through the blocking temperature of the antiferromagnet, an…
We investigated the perpendicular exchange bias (PEB) switching from negative- to positive-exchange bias state for Cr2O3/Pt/Co exchange coupling thin film system exhibiting positive exchange bias phenomena. By changing Pt spacer layer…
Voltage control effects provide an energy-efficient means of tailoring material properties, especially in highly integrated nanoscale devices. However, only insulating and semiconducting systems can be controlled so far. In metallic…
The electric field effect on magnetic anisotropy was studied in an ultrathin Fe(001) monocrystalline layer sandwiched between Cr buffer and MgO tunnel barrier layers, mainly through post-annealing temperature and measurement temperature…
Current induced spin-orbit magnetic fields (iSOFs), arising either in single-crystalline ferromagnets with broken inversion symmetry1,2 or in non-magnetic metal/ferromagnetic metal bilayers3,4, can produce spin-orbit torques which act on a…
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic…