Related papers: Temperature dependent moir\'e trapping of interlay…
Trapped interlayer excitons (IXs) in MoSe2-WSe2 heterobilayers have generated interest for use as single quantum emitter arrays and as an opportunity to study moir\'e physics in transition metal dichalcogenide (TMD) heterostructures. IXs…
Moir\'{e} excitons (MXs) are electron-hole pairs localised by the periodic (moir\'{e}) potential forming in two-dimensional heterostructures (HSs). MXs can be exploited, $e.g.$, for creating nanoscale-ordered quantum emitters and achieving…
We present time-resolved and CW optical spectroscopy studies of interlayer excitons (IXs) in 2$H-$ and 3$R-$stacked MoSe$_2$/WSe$_2$ heterobilayers and obtain evidence for the strong participation of hot phonons in the underlying…
Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in…
Transition metal dichalcogenide (TMD) heterobilayers provide a versatile platform to explore unique excitonic physics via properties of the constituent TMDs and external stimuli. Interlayer excitons (IXs) can form in TMD heterobilayers as…
Novel excitonic phenomena emerging in transition metal dichalcogenide (TMDC) heterostructures belong to the most exciting topics in contemporary physics of van der Waals materials. Interlayer excitons (IXs) stand out among those due to…
We present a detailed investigation of the exciton and trion dynamics in naturally doped MoSe2 and WSe2 single atomic layers as a function of temperature in the range 10-300K under above band-gap laser excitation. By combining…
In heterostructures consisting of different transition-metal dichalcogenide monolayers, a staggered band alignment can occur, leading to rapid charge separation of optically generated electron-hole pairs into opposite monolayers. These…
At cryogenic temperatures, the photoluminescence spectrum of monolayer WSe2features a num-ber of lines related to the recombination of so-called localized excitons. The intensity of these lines strongly decreases with increasing…
Layered materials enable the assembly of a new class of heterostructures where lattice-matching is no longer a requirement. Interfaces in these heterostructures therefore become a fertile ground for unexplored physics as dissimilar…
We report on the far-field photoluminescence intensity distribution of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks as measured by back focal plane imaging in the temperature range between 1.7 K and 20 K. By comparing the data…
We report lasing of moir\'e trapped interlayer excitons (IXs) by integrating a pristine hBN-encapsulated MoSe$_2$/WSe$_2$ heterobilayer into a high-$Q$ ($>10^4$) nanophotonic cavity. We control the cavity-IX detuning using a magnetic field…
We investigate the photoluminescence of interlayer excitons in heterostructures consisting of monolayer MoSe2 and WSe2 at low temperatures. Surprisingly, we find a doublet structure for such interlayer excitons. Both peaks exhibit long…
Moir\'e superlattices in van der Waals heterostructures offer highly tunable quantum systems with emergent electronic and excitonic properties such as superconductivity, topological edge states, and moir\'e-trapped excitons. Theoretical…
Developments in optoelectronics and spin-optronics based on transition metal dichalcogenide monolayers (MLs) need materials with efficient optical emission and well-defined transition energies. In as-exfoliated MoS2 MLs the…
Single layers of WS2 are direct gap semiconductors with high photoluminescence (PL) yield holding great promise for emerging applications in optoelectronics. The spatial confinement in a 2D monolayer together with the weak dielectric…
Moir\'e potentials in two-dimensional materials have been proven to be of fundamental importance to fully understand the electronic structure of van der Waals heterostructures, from superconductivity to correlated excitonic states. However,…
We have investigated the exciton dynamics in transition metal dichalcogenide mono-layers using time-resolved photoluminescence experiments performed with optimized time-resolution. For MoSe2 monolayers, we measure $\tau_{rad}=1.8\pm0.2$ ps…
Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping of TMDs leads to the conversion of neutral excitons into…
Vertical heterostructures (HS) of transition metal dichalcogenides (TMDs) host interlayer excitons (ILX), with electrons and holes residing in different layers. With respect to their intralayer counterparts, ILX feature much longer…