Related papers: Radio frequency reflectometry in silicon-based qua…
Single electron spins confined in silicon quantum dots hold great promise as a quantum computing architecture with demonstrations of long coherence times, high-fidelity quantum logic gates, basic quantum algorithms and device scalability.…
Charge sensing is a sensitive technique for probing quantum devices, of particular importance for spin qubit readout. To achieve good readout sensitivities, the proximity of the charge sensor to the device to be measured is a necessity.…
Spin qubits have been successfully realized in electrostatically defined, lateral few-electron quantum dot circuits. Qubit readout typically involves spin to charge information conversion, followed by a charge measurement made using a…
We present a simple home made solution enabling in-situ RF reflectometry measurements with a millikelvin scanning tunneling microscope (mk-STM). The additions described below were made using RF best practices following similar detection…
An important requirement for spin-based quantum information processing is reliable and fast readout of electron spin states, allowing for feedback and error correction. However, common readout techniques often require additional gate…
The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge mapping processes, however uncertainties remain about the…
Spin qubits in germanium are a promising contender for scalable quantum computers. Reading out of the spin and charge configuration of quantum dots formed in Ge/Si core/shell nanowires is typically performed by measuring the current through…
The paper presents algorithms to realize effectively and accurately the stepped-frequency waveform reflectometry (SFWR), i.e. the reflectometric technique based on the use of sinusoidal bursts. This technique is useful for monitoring the…
Developing fast and accurate control and readout techniques is an important challenge in quantum information processing with semiconductor qubits. Here, we study the dynamics and the coherence properties of a GaAs/AlGaAs double quantum dot…
Electrons confined in semiconductor quantum dot arrays have both charge and spin degrees of freedom. The spin provides a well-controllable and long-lived qubit implementation. The charge configuration in the dot array is influenced by…
Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by $1/f$ charge noise. We investigate theoretically fluctuations of ground…
The strong atomistic spin orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio-frequency reflectometry setup we…
The detection of the quantum dot charge state using a quantum point contact charge detector has opened a new exciting route for the investigation of quantum dot devices in recent years. In particular, time-resolved charge detection allowed…
Rapid, high-fidelity single-shot readout of quantum states is a ubiquitous requirement in quantum information technologies, playing a crucial role in quantum computation, quantum error correction, and fundamental tests of non-locality.…
We present a new readout method for a superconducting flux qubit, based on the measurement of the Josephson inductance of a superconducting quantum interference device that is inductively coupled to the qubit. The intrinsic flux detection…
We demonstrate fast readout of a double quantum dot (DQD) that is coupled to a superconducting resonator. Utilizing parametric amplification in a nonlinear operational mode, we improve the signal-to-noise ratio (SNR) by a factor of 2000…
Single-shot read-out of individual qubits is typically the slowest process among the elementary single- and two-qubit operations required for quantum information processing. Here, we use resonance fluorescence from a single-electron charged…
We demonstrate systematic resonance fluorescence recovery with near-unity emission efficiency in single quantum dots embedded in a charge-tunable device in a wave-guiding geometry. The quantum dot charge state is controlled by a gate…
We present a new way of continuously reading-out the state of a single electronic spin. Our detection scheme is based on an exchange interaction between the electronic spin and a nearby read-out quantum dot. The coupling between the two…
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon…