Related papers: The statistics of electron-hole avalanches
The statistics of burst avalanche sizes $n$ during failure processes in a fiber bundle follows a power law, $D(n)\sim n^{-\xi}$, for large avalanches. The exponent $\xi$ depends upon how the avalanches are provoked. While it is known that…
Contrary to a prevailing assumption that black holes would swiftly discharge, we argue that black holes can charge preferentially when boosted through an ambient magnetic field. Though the details are very different, the preference for…
We demonstrate single electron-hole pair resolution in a single-sided, contact-free 1 cm$^2$ by 1 mm thick Si crystal operated at 48 mK, with a baseline energy resolution of 3 eV. This crystal can be operated at voltages in excess of…
Sensing electric fields with high sensitivity, high spatial resolution and at radio frequencies can be challenging to realize. Recently, point defects in silicon carbide have shown their ability to measure local electric fields by optical…
Coulomb drag between adjacent electron and hole gases has attracted considerable attention, being studied in various two-dimensional systems, including semiconductor and graphene heterostructures. Here we report measurements of…
Here we report and discuss the avalanche-like up-conversion behavior in absence of the avalanche. We experimentally observed significant changes in the slope of the curve for the intensity dependence of up-conversion luminescence of erbium…
We investigate the energy relaxation segmentation in a resonant tunneling heterostructures by assessing the optical and transport dynamics of non-equilibrium charge carriers. The electrical and optical properties are analyzed using…
Charged Black holes in Gauss-Bonnet extended gravity are studied. The electromagnetic field is coupled non-minimally, as in U(2,2) Chern-Simons theory. We find that the geometrical properties of the solution exhibit ``phase transitions" as…
Photon-number measurements are a fundamental technique for the discrimination and characterization of quantum states of light. Beyond the abilities of state-of-the-art devices, we present measurements with an array of 100 avalanche…
We have made a single-photon detector that relies on photoconductive gain in a narrow electron channel in an AlGaAs/GaAs 2-dimensional electron gas. Given that the electron channel is 1-dimensional, the photo-induced conductance has…
The unusual dispersion of electron states in antinodal direction for $n_{h}\simeq\frac{1}{8}$ holes/copper is explained. In photoelectron excitations, transformations of the $\mathbf{k}$ space as a consequence of symmetry breaking proves to…
Large scale computer simulations are presented to investigate the avalanche statistics of sand piles using molecular dynamics. We could show that different methods of measurement lead to contradicting conclusions, presumably due to…
Photomultiplier tubes and avalanche photodiodes, which are commonly used in quantum optic experiments, are sometimes referred to as threshold detectors because, in photon counting mode, they cannot discriminate the number of photoelectrons…
High intensity back-scattered laser beams will allow the efficient conversion of a substantial fraction of the incident lepton energy into high energy photons, thus significantly extending the physics capabilities of an electron-electron or…
Wire chambers are routinely operated as tracking detectors in magnetic spectrometers at high-intensity continuous electron beams. Especially in experiments studying reactions with small cross-sections the reaction yield is limited by the…
InGaAs avalanche photodiodes (APDs) are convenient for single photon detection in the near-infrared (NIR) including the fibre communication bands (1.31/1.55 $\mu$m). However, to suppress afterpulse noise due to trapped avalanche charge,…
A photon detector combining the two avalanche photon diodes (APD) has been demonstrated for qubit discrimination in 1550 nm. Spikes accompanied with the signals in gated-mode were canceled by balanced output from the two APDs. The spike…
Magnetic guiding fields in combination with energy dispersive semiconductor detectors have been employed already more than 50 years ago for in-beam internal conversion electron spectroscopy. Even then it was recognized that efficiency…
The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open…
Three-dimensional topological insulators harbour metallic surface states with exotic properties. In transport or optics, these properties are typically masked by defect-induced bulk carriers. Compensation of donors and acceptors reduces the…