Related papers: Reduced lasing thresholds in GeSn microdisk caviti…

GeSn alloys are metastable semiconductors that have been proposed as building blocks for silicon-integrated short-wave and mid-wave infrared photonic and sensing platforms. Exploiting these semiconductors requires, however, the control of…

Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type…

Hybrid SiN-QD microlasers coupled to a passive SiN output waveguide with 7{\mu}m diameter and record low threshold density of 27 {\mu}J cm-2 are demonstrated. A new design and unique processing scheme starting from SiN/QD/SiN stacks offer…

The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to…

This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By…

We present ab initio calculations of the electronic and optical properties of hexagonal SiGe alloys in the lonsdaleite structure. Lattice constants and electronic band structures in excellent agreement with experiment are obtained using…

Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an…

Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic and photonic devices. In the growth and processing of these…

Raman lasers based on integrated silica whispering gallery mode resonant cavities have enabled numerous applications from telecommunications to biodetection. To overcome the intrinsically low Raman gain value of silica, these devices…

The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies.…

GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequate electron confinement and is insufficient for room…

Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. To address this…

Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge$_{1-x}$Sn$_x$) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon…

This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has…

Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence,…

The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the effect of the growth conditions on the morphology and…

The availability of high-frequency pulsed emitters in the $2-2.5\,\mu$m wavelength range paved the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber-optical communications, surveillance and recognition,…

Physical models of Ge energy band structure and material loss were implemented in LASTIP(TM), a 2D simulation tool for edge emitting laser diodes. The model calculation is able to match experimental data available. Important design…

Understanding the nature and behavior of vacancy-like defects in epitaxial GeSn metastable alloys is crucial to elucidate the structural and optoelectronic properties of these emerging semiconductors. The formation of vacancies and their…

Proposed is a new laser material for the making of active elements of tunable lasers for mid IR region (4-5 mkm) - Zn1-xMgxSe (0.11<x<0.42) single crystals doped with Fe2+ ions. The optical transmission spectra of Fe2+:Zn0.89Mg0.11Se and…