Related papers: Lasing in Group-IV materials
Germanium-Tin (GeSn) semiconductors are promising for mid-infrared optoelectronics owing to their silicon compatibility, tunable bandgap, and potential for room-temperature operation. Released GeSn membranes provide an additional degree of…
Hybrid silicon nanowires with an integrated light-emitting segment can significantly advance nanoelectronics and nanophotonics. They would combine transport and optical characteristics in a nanoscale device, which can operate in the…
Silicon's inherently indirect bandgap severely limits its radiative efficiency, posing a fundamental challenge to the development of practical silicon-based light sources. While strategies such as nanoscale confinement of electrons and…
Irradiation of solids with ultrashort pulses and laser processing in the mid-Infrared (mid-IR) spectral region is a yet predominantly unexplored field with a large potential for a wide range of applications. In this work, laser driven…
Many precision applications in the mid-infrared spectral range have strong constraints based on quantum effects that are expressed in particular noise characteristics. They limit, e.g., sensitivity and resolution of mid-infrared imaging and…
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the…
Conventional semiconductors such as silicon and InGaAs based photodetectors have encountered a bottleneck in modern electronics and photonics in terms of spectral coverage, low resolution, non-transparency, non-flexibility and…
Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential to impact group IV semiconductor devices. Indeed, the ability to independently engineer both lattice parameter and band gap holds the premise…
Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging…
Non-classical light sources offer a myriad of possibilities in fundamental science and applications including quantum cryptography and quantum lithography. Single photons can encode quantum information and multi-qubit gates in silica…
Inorganic photonic materials demonstrating luminescence in the infrared spectral range (> 1 um) play a vital important role in modern information, telecommunication, and biomedicine disciplines.
The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range…
Recent advances in photonic integration have propelled microwave photonic technologies to new heights. The ability to interface hybrid material platforms to enhance light-matter interactions has led to the developments of ultra-small and…
Integrated quantum photonics relies critically on the purity, scalability, integrability, and flexibility of a photon source to support diverse quantum functionalities on a single chip. Up to date, it remains an open challenge to realize an…
Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. To address this…
It is foreseen to significantly increase the luminosity of the LHC in order to harvest the maximum physics potential. Especially the Phase-II-Upgrade foreseen for 2023 will mean unprecedented radiation levels, significantly beyond the…
Narrow linewidth visible light lasers are critical for atomic, molecular and optical (AMO) applications including atomic clocks, quantum computing, atomic and molecular spectroscopy, and sensing. Historically, such lasers are implemented at…
Photonic integration offers the potential to bring complex high-performance optical systems to the form factor of a compact semiconductor chip. However, the range of system functions accessible critically depends on the extent to which…
Single-photon creation through parametric downconversion underpins quantum technology for quantum sensing and imaging. Here we numerically study the creation of single photons in the near- and mid-infrared regime from 1.5 - 12 um in a range…
We present an approach to fabrication and packaging of integrated photonic devices that utilizes waveguide and detector layers deposited at near-ambient temperature. All lithography is performed with a 365 nm i-line stepper, facilitating…