Related papers: Pure spin current injection of single-layer monoch…
We show that spin-dependent electron-phonon interaction in the energy relaxation of a two-dimensional electron gas results in equal and oppositely directed currents in the spin-up and spin-down subbands yielding a pure spin current. In our…
Spin injection from Co70Fe30 and Fe contacts into bulk GaAs(001) epilayers is studied experimentally. Using nonlocal measurements, the spin polarization of the differential conductance is determined as a function of the bias voltage applied…
Creating, manipulating and detecting spin polarized carriers are the key elements of spin based electronics. Most practical devices use a perpendicular geometry in which the spin currents, describing the transport of spin angular momentum,…
We show that the injection of a pure spin current (not accompanied by charge current) into a ring can induce a circulating charge current in the ring, provided that transport coefficients of the ring are spin-dependent and inhomogeneous. As…
Using scanning Kerr microscopy, we directly acquire two-dimensional images of spin-polarized electrons flowing laterally in bulk epilayers of n:GaAs. Optical injection provides a local dc source of polarized electrons, whose subsequent…
We have fabricated a high-quality monolayer WSe2 film on bilayer graphene by epitaxial growth, and revealed the electronic states by spin- and angle-resolved photoemission spectroscopy. We observed a direct energy gap at the Brillounin-zone…
Monolayer PtSe$_2$ is a semiconducting transition metal dichalcogenide characterized by an indirect band gap, space inversion symmetry, and high carrier mobility. Strong intrinsic spin-orbit coupling and the possibility to induce extrinsic…
A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically-biased (Ga,Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by…
Circularly polarized optical excitation is used to demonstrate the efficient injection of spin-polarized excitons to individual self-assembled CdSe quantum dots in ZnSe barrier. The exciton spin-transfer is studied by means of…
Monolayer NbSe2 is a metallic two-dimensional (2D) transition-metal dichalcogenide material. Owing to the lattice structure and the strong atomic spin-orbit coupling (SOC) field, monolayer NbSe2 possesses Ising-type SOC which acts as…
Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk…
Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond timescales has implications for ultrafast spintronics, data processing and storage applications. However, the possibility to directly…
We employ optical pump-probe spectroscopy to investigate the voltage dependence of spontaneous electron and nuclear spin polarizations in hybrid MnAs/n-GaAs and Fe/n-GaAs Schottky diodes. Through the hyperfine interaction, nuclear spin…
Using a spatially-resolved optical pump-probe experiment, we measure the lateral transport of spin/valley polarized electrons over very long distances (tens of micrometers) in a single WSe2 monolayer. By locally pumping the Fermi sea of 2D…
The photon helicity may be mapped to a spin-1/2, whereby we put forward an intrinsic interaction between a polarized light beam as a ``photon spin current'' and a pure spin current in a semiconductor, which arises from the spin-orbit…
The spin-dependent recombination (SDR) has been observed in GaAs_{1-x}N_{x} (x = 2.1, 2.7, 3.4%) at room temperature. It reveals itself in a decrease of the edge photoluminescence (PL) intensity by more than a factor of 3 when either the…
${\gamma}$-GeSe is a new type of layered bulk material that was recently successfully synthesized. By means of density functional theory first-principles calculations, we systematically studied the physical properties of two-dimensional…
The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a…
Electrical spin injection and transport in silicon are central challenges for realizing semiconductor-based spintronic devices, particularly in p-type Si, where strong spin relaxation and interface effects often suppress detectable spin…
Pure spin currents, i.e. the transport of angular momentum without an accompanying charge current, represent a new, promising avenue in modern spintronics from both a fundamental and an application point of view. Such pure spin currents can…