Related papers: Direct Access to Auger recombination in Graphene
We present a microscopic study on current generation in graphene in response to an electric field. While scattering is generally considered to reduce the current, we reveal that in graphene Auger processes give rise to a current enhancement…
Auger processes play a critical role in the behavior of colloidal quantum dots (QDs). While nonradiative Auger recombination is a key performance-limiting factor in light-emitting applications, Auger effects also present exciting…
The temporal dynamics of charge carriers determines the speed with which electronics can be realized in condensed matter, and their direct manipulation with optical fields promises electronic processing at unprecedented petahertz…
Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and…
We report Auger recombination rates for wurtzite InGaN calculated from first principles density-functional and many-body-perturbation theory. Two different mechanisms are examined -- inter- and intra-band recombination -- that affect…
In a recent letter [Phys. Rev. Lett. 110, 177406 (2013)], presenting a spectroscopic study of the electrons emitted from the GaN p-cap of a forward-biased InGaN/GaN light-emitting diode (LED), the authors observed at least two distinct…
For Si and Ge nanocrystals (NCs) embedded in wide band-gap matrices, Auger recombination (AR) and carrier multiplication (CM) lifetimes are computed exactly in a three-dimensional real space grid using empirical pseudopotential wave…
The pseudospin of Dirac electrons in graphene manifests itself in a peculiar momentum anisotropy for photo-excited electron-hole pairs. These interband excitations are in fact forbidden along the direction of the light polarization, and are…
While the Dirac band structure of graphene has established it as a leading platform for ultrafast optoelectronics, its non-perturbative nonlinear response under intense excitation remains poorly understood. Here, we report ultrafast…
We present a novel method for the analysis of the Doppler broadened spectrum of gamma photons emitted following the annihilation of surface trapped positrons with the electrons of bilayer graphene supported on polycrystalline Cu substrate.…
The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large…
Spectroscopic studies of semiconductor quantum dots (SQDs) addressing the problem of non-radiative carrier losses is vital for the improvement in the efficiency of various light-emitting devices. Various designs of SQDs emitter like doping,…
Influence of electron-electron relaxation processes on Auger recombination rate in direct band semiconductors is investigated. Comparison between carrier-carrier and carrier-phonon relaxation processes is provided. It is shown that…
We show that strongly photoexcited graphene monolayers with 35fs pulses quasi-instantaneously build up a broadband, inverted Dirac fermion population. Optical gain emerges and directly manifests itself via a negative optical conductivity…
We fabricate a graphene p-n-p heterojunction and exploit the coherence of weakly-confined Dirac quasiparticles to resolve the underlying scattering potential using low temperature scanning gate microscopy. The tip-induced perturbation to…
Electron-hole generation and recombination rates for plasmon emission and absorption in Graphene are presented. The recombination times of carriers due to plasmon emission have been found to be in the tens of femtoseconds to hundreds of…
We present a microscopic study on the impact of doping on the carrier dynamics in graphene, in particular focusing on its influence on the technologically relevant carrier multiplication in realistic, doped graphene samples. Treating the…
The Auger recombination in bulk semiconductors can depopulate the charge carriers in a non-radiative way, which, fortunately, only has detrimental impact on optoelectronic device performance under the condition of high carrier density…
Layers of twisted bilayer graphene exhibit varieties of exotic quantum phenomena1-5. Today, the twist angle {\Theta} has become an important degree of freedom for exploring novel states of matters, i.e. two-dimensional superconductivity (…
We investigate the dynamics of photoexcited carriers and nonequilibrium phonons in graphene by solving the microscopic kinetic Bloch equations. The pump and drift effects from the laser field as well as the relevant scatterings (including…