English
Related papers

Related papers: Understanding interface properties in 2D heterostr…

200 papers

Bilayer graphene field-effect transistors (BLG-FETs), unlike conventional semiconductors, are greatly sensitive to potential fluctuations due to the charged impurities in high-k gate stacks since the potential difference between two layers…

Applied Physics · Physics 2018-09-18 Teerayut Uwanno , Takashi Taniguchi , Kenji Watanabe , Kosuke Nagashio

The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other…

Two-dimensional (2D) layered materials are promising for replacing Si to overcome the scaling limit of recent ~5 nm-length metal-oxide-semiconductor field-effect transistors (MOSFETs). However, the insulator/2D channel interface severely…

Applied Physics · Physics 2020-06-20 N. Fang , S. Toyoda , T. Taniguchi , K. Watanabe , K. Nagashio

Stacked van der Waals (vdW) heterostructures where semi-conducting two-dimensional (2D) materials are contacted by overlayed graphene electrodes enable atomically-thin, flexible electronics. We use first-principles quantum transport…

Materials Science · Physics 2017-05-24 Daniele Stradi , Nick R. Papior , Mads Brandbyge

The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The…

2D materials are expected to be favorable channel materials for field-effect transistor (FET) with extremely short channel length because of their superior immunity to short-channel effects (SCE). Graphene, which is the most famous 2D…

Mesoscale and Nanoscale Physics · Physics 2016-03-03 Toru Kanazawa , Tomohiro Amemiya , Atsushi Ishikawa , Vikrant Upadhyaya , Kenji Tsuruta , Takuo Tanaka , Yasuyuki Miyamoto

The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensive research in applications, such as graphene field-effect…

Heterostructures made by stacking different materials on top of each other are expected to exhibit unusual properties and new phenomena. Interface of the heterostructures plays a vital role in determining their properties. Here, we report…

Materials Science · Physics 2018-05-30 Jia-Bin Qiao , Yue Gong , Haiwen Liu , Jin-An Shi , Lin Gu , Lin He

Since the 1960's when Gordon Moore proposed that the transistor density in our electronic devices should double every two years while the cost is halved, the semiconductor industry has taken this statement to heart. Over the last few…

Materials Science · Physics 2022-07-27 Aditya Muralidharan

We propose the design of low strained and energetically favourable mono and bilayer graphene overlayer on anatase TiO$_2$ (001) surface and examined the electronic structure of the interface with the aid of first principle calculations. In…

Materials Science · Physics 2020-12-22 Shashi B. Mishra , Somnath C. Roy , B. R. K. Nanda

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…

Mesoscale and Nanoscale Physics · Physics 2013-06-25 Branimir Radisavljevic , Andras Kis

Interface interactions in 2D vertically stacked heterostructures play an important role in optoe-lectronic applications, photodetectors based on graphene/InSe heterostructures had shown promising performance nowadays. However, nonlinear…

Optics · Physics 2023-05-12 Jialin Li , Lizhen Wang , Yuzhong Chen , Yujie Li , Haiming Zhu , Linjun Li , Limin Tong1

The discovery of graphene has spurred vigorous investigation of 2D materials, revealing a wide range of extraordinary properties and functionalities. 2D heterostructural materials have recently been fabricated by assembling isolated planes…

Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene,…

Mesoscale and Nanoscale Physics · Physics 2012-09-17 Han Wang , Lili Yu , Yi-Hsien Lee , Yumeng Shi , Allen Hsu , Matthew Chin , Lain-Jong Li , Madan Dubey , Jing Kong , Tomas Palacios

The vertical integration of multiple two-dimensional (2D) materials in heterostructures, held together by van der Waals forces, has opened unprecedented possibilities for modifying the (opto-)electronic properties of nanodevices. Graphene,…

Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can not be reached without accompanying gate insulators which are…

MXene-based heterostructures have received considerable interest owing to their unique properties. Herein, we examine various heterostructures of a prototypical MXene and graphene using density functional theory. We find that the adhesion…

Mesoscale and Nanoscale Physics · Physics 2019-02-27 Rui Li , Weiwei Sun , Cheng Zhan , Paul R. C. Kent , De-en Jiang

The beginning of high interest in two-dimensional (2D) crystals is marked by the synthesis of graphene, which constitutes exemplary monolayer material. This is due to the multiple extraordinary properties of graphene, particularly in the…

Mesoscale and Nanoscale Physics · Physics 2025-02-21 Dominik Szczȩśniak , Jakub T. Gnyp , Marta Kielak

Tunability of interfacial effects between two-dimensional (2D) crystals is crucial not only for understanding the intrinsic properties of each system, but also for designing electronic devices based on ultra-thin heterostructures. A…

The performance and scalability of two-dimensional (2D) field-effect transistors (FETs) are strongly influenced by geometry-defined electrostatics. In most 2D FET studies, the gate overlaps with the source and drain electrodes, allowing the…

Mesoscale and Nanoscale Physics · Physics 2025-11-14 Victoria M. Ravel , Sarah R. Evans , Samantha K. Holmes , James L. Doherty , Md Sazzadur Rahman , Tania Roy , Aaron D. Franklin
‹ Prev 1 2 3 10 Next ›