Related papers: Ultra-shallow junction electrodes in low-loss sili…
We present low-temperature measurements of low-loss superconducting nanowire-embedded resonators in the low-power limit relevant for quantum circuits. The superconducting resonators are embedded with superconducting nanowires with widths…
Electrically-detected magnetic resonance (EDMR) provides a highly sensitive method for reading out the state of donor spins in silicon. The technique relies on a spin-dependent recombination (SDR) process involving dopant spins that are…
The ability to confine light down to atomic scales is critical for the development of applications in optoelectronics and optical sensing as well as for the exploration of nanoscale quantum phenomena. Plasmons in metallic nanostructures can…
We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentration between around 2.1 and 8.7 x 1017 cm-3, we find that a…
We have extended the range of the high-pressure optical spectroscopy to the far-infrared region keeping the accuracy of ambient-pressure experiments. The newly-developed method offers a powerful tool for the study of pressure-induced phase…
The structural interface properties of layered Pt/Ti/SiO2/Si electrodes have been investigated using high-resolution specular and diffuse x-ray reflectivity under grazing angles. Currently this multilayer system represents a technological…
Spatially controlling the Fermi level of topological insulators and keeping its electronic states stable are indispensable processes to put this material into practical use for semiconductor spintronics devices. So far, however, such a…
Segmented, or slow-wave electrodes have emerged as an index-matching solution to improve bandwidth of traveling-wave Mach Zehnder and phase modulators on the thin-film lithium niobate on insulator platform. However, these devices require…
In strongly correlated transition metal dichalcogenides, an intricate interplay of polaronic distortions, stacking arrangement, and electronic correlations determines the nature of the insulating state. Here, we study the response of the…
We characterize the mechanical quality factor of micro-oscillators covered by a highly reflective coating. We test an approach to the reduction of mechanical losses, that consists in limiting the size of the coated area to reduce the strain…
Integrated photonic circuits have transformed data communication, biosensing, and light detection and ranging, and hold wide-ranging potential for optical computing, optical imaging and signal processing. These applications often require…
We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave…
We report the formation of sub-5 nm ultrashallow junctions in 4 inch Si wafers enabled by the molecular monolayer doping of phosphorous and boron atoms and the use of conventional spike annealing. The junctions are characterized by…
The development of sophisticated integrated photonic circuits demands microresonators that combine exceptional optical confinement with dynamic operational flexibility. Here, we demonstrate a racetrack resonator on the thin-film lithium…
Electron-doping of the semimetal (CeOFeAs) by either fluorine (max Tc ~ 43 K)or cobalt (max Tc ~ 11 K) leads to superconductivity. Here we show the effect of transition metal (Co) substitution at the iron site on the superconducting…
Analytical formulas are presented for simplified but useful qubit geometries that predict surface dielectric loss when its thickness is much less than the metal thickness, the limiting case needed for real devices. These formulas can thus…
Semiconducting diode with nonreciprocal transport effect underlies the cornerstone of contemporary integrated circuits (ICs) technology. Due to isotropic superconducting properties and the lack of breaking of inversion symmetry for…
The in-plane penetration depth of Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films at various doping obtained from oxygen reduction has been measured, using AC susceptibility measurements. For the higher doping samples, the superfluid density…
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous…
The surface molecular doping of organic semiconductors can play an important role in the development of organic electronic or optoelectronic devices. Single-crystal rubrene remains a leading molecular candidate for applications in…