Related papers: Measurement of $p\!-\!n$-junction diode behavior u…
Recent theoretical results obtained by Barybin and Santos have suggested that the dynamic admittance of the $p-n$-junction is proportional to the modified Bessel function of the first kind which depend on an amplitude of ac signal. This…
An analytical theory of non-uniformly doped or shaped PN-junction diodes submitted to large-signals at high frequencies is presented. The resulting expressions can be useful to evaluate the performance of semiconductor device modeling…
Spectral approach to the charge carrier transport in $p-n$-junctions has allowed us to revise the theoretical results relating to large signal operation of the junction to make them valid for both the low and high frequencies ranges. The…
We describe here the characteristics of two types of high-quality PbTe p-n-junctions, prepared in this work: (1) by thermal diffusion of In4Te3 gas (TDJ), and (2) by ion implantation (implanted junction, IJ) of In (In-IJ) and Zn (Zn-IJ).…
We show that in a simple experiment at undergraduate level, suitable to be performed in classes of science and engineering students, it is possible to test accurately, on a popular 1N4148 p-n diode, the range of the junction currents where…
We observed qualitatively dissimilar frequency dependence of negative capacitive response under high charge injection in two sets of junction diodes which are functionally different from each other i.e. electroluminescent diodes and…
Voltage current characteristics of a PN-junction diode are intrinsically nonlinear in nature. It is shown in this paper that a mathematical form of nonlinearity of a PN-junction diode resembles the nonlinear response of electric…
Dynamical theories for piezotronic and piezo-phototropic devices are incomplete. In this work, we aim to establish a theoretical method for modelling dynamic characteristics of devices exhibiting these two emerging phenomena. By taking the…
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up…
Incorporating a variable capacitance diode into a radio-frequency matching circuit allows us to in-situ tune the resonance frequency of an RF quantum point contact, increasing the versatility of the latter as a fast charge sensor of a…
Electrically connected and plasmonically enhanced molecular junctions combine the optical functionalities of high field confinement and enhancement (cavity function), and of high radiative efficiency (antenna function) with the electrical…
We present an innovative technique which allows the simultaneous measurement of the dielectric constant of a material at many frequencies, spanning a four orders of magnitude range chosen between 10 --2 Hz and 10 4 Hz. The sensitivity and…
New resonance steps are found in the experimental current-voltage characteristics of long, discrete, one-dimensional Josephson junction arrays with open boundaries and in an external magnetic field. The junctions are underdamped, connected…
In this article we present an experimental study of microwave resonators made out of Josephson junctions. The junctions are embedded in a transmission line geometry so that they increase the inductance per length for the line. By comparing…
Thermal diode is a growing technology and important for active thermal flow control. Since the theoretical designing of thermal diode in 2004, various kinds of solid-state thermal diodes have been theoretically and experimentally…
Radiation-pressure interactions between harmonic oscillators have enabled exquisite measurement precision and control, made possible by using strong sideband drives, enhancing the coupling rate while also linearizing the interaction. In…
In-circuit impedance measurement provides useful information for many EMC applications. The inductive coupling approach is a promising in-circuit impedance measurement method due to its non-contact characteristics and simple on-site…
The current-voltage p-n junction characteristics were mainly analyzed until now at low injection levels and high level injection separately. This work unifies the low injection, medium injection, high injection levels and the ohmic region…
Thermal and charge transport in the diffusive normal metal(DN) / insulator / $s$-, $d$- and p-wave superconductor junctions are studied for various situations, where we have used the Usadel equation with Nazarov's generalized boundary…
An instrument has been developed for precision controlled exposures of electronic devices and material samples in particle beams. The instrument provides simultaneously a real time record of the profile of the beam and the fluence received.…