Related papers: Few-electron Single and Double Quantum Dots in an …
We report the observation of fractional quantum Hall (FQH) effects in a two-dimensional electron gas (2DEG) confined to an InAs/AlGaSb quantum well, using a dual-gated Hall-bar device allowing for the independent control of the vertical…
Single nuclear spins in silicon are a promising resource for quantum technologies due to their long coherence times and excellent control fidelities. Qubits and qudits have been encoded on donor nuclei, with successful demonstrations of…
We study effects of the oft-neglected cubic Dresselhaus spin-orbit coupling (i.e., $\propto p^3$) in GaAs/AlGaAs quantum dots. Using a semiclassical billiard model, we estimate the magnitude of the spin-orbit induced avoided crossings in a…
A lateral quantum dot design for coherent electrical manipulation of a two-level spin-charge system is presented. Two micron-size permanent magnets integrated to high-frequency electrodes produce a static slanting magnetic field suitable…
We study the g-factor of discrete electron states in InAs nanowire based quantum dots. The g values are determined from the magnetic field splitting of the zero bias anomaly due to the spin 1/2-Kondo effect. Unlike to previous studies based…
Magnetoresistance measurements have been performed on a gated two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear features of the quantum Hall effect were…
We study electron-spin-photon coupling in a single-spin double quantum dot embedded in a superconducting stripline cavity. With an external magnetic field, we show that either a spin-orbit interaction (for InAs) or an inhomogeneous magnetic…
Density-functional calculations using an exact exchange potential for a two-dimensional electron gas (2DEG) formed in a GaAs single quantum well predict the existence of a spin-polarized phase, when an excited subband becomes slightly…
We study screening properties of the two-dimensional electron gas with Rashba spin-orbit coupling. Calculating the dielectric function within the random phase approximation, we describe the new features of screening induced by spin-orbit…
The Dresselhaus spin-orbit interaction (SOI) of a series of two-dimensional electron gases (2DEGs) hosted in GaAs/AlGaAs and InGaAs/GaAs (001) quantum wells (QWs) is measured by monitoring the precession frequency of the spins as a function…
We report on spatially resolved measurements of the spin-orbit effective magnetic field in a GaAs/InGaAs quantum-well. Biased gate electrodes lead to an electric-field distribution in which the quantum-well electrons move according to the…
We report the realization of a robust and highly controllable two-dimensional (2D) spin-orbit (SO) coupling with topological non-trivial band structure. By applying a retro-reflected 2D optical lattice, phase tunable Raman couplings are…
In this work the intersubband electronic properties of two laterally coupled dome-shaped InAs/GaAs quantum dots were investigated. The envelope functions and eigenenergies were calculated as function of distance between the dots. The…
The article shows a simple model that computes the magnetoconduction and the integer quantum Hall effect (IQHE) in a two-dimensional electron system (2DES) where the spin is other degree of freedom in the system. The 2DES is confined in a…
We report on a low-temperature transport study of a single-gate, planar field-effect device made from a free-standing, wurtzite-crystalline InAs nanosheet. The nanosheet is grown via molecular beam epitaxy and the field-effect device is…
Spin-flips are one of the limiting factors for spin-based information processing. We demonstrate a transport approach for determining the spin-flip rates of a self-assembled InAs double quantum dot occupied by a single electron. In such…
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically…
We report magneto-transport measurements on high-mobility two-dimensional electron systems (2DESs) confined in In_0.75Ga_0.25As/In_0.75Al_0.25As single quantum wells. Several quantum Hall states are observed in a wide range of temperatures…
We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a $162.5\,\text{nm}$ thin diode structure. The quantum dots are just $88\,\text{nm}$ from the…
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which…