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Related papers: Metal-insulator transition in transition metal dic…

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To understand the essence of the exciton Mott transition in three-dimensional electron-hole systems, the metal-insulator transition is studied for a two-band Hubbard model in infinite dimensions with interactions of electron-electron…

Strongly Correlated Electrons · Physics 2007-05-23 Yuh Tomio , Tetsuo Ogawa

We use quantum Monte Carlo and exact diagonalization calculations to study the Mott-insulator to superconductor quantum phase transition in a two-dimensional fermionic Hubbard model with attractive interactions in the presence of a…

Strongly Correlated Electrons · Physics 2015-10-07 Rubem Mondaini , Predrag Nikolic , Marcos Rigol

We investigate paramagnetic metal-insulator transitions in the infinite-dimensional ionic Hubbard model at finite temperatures. By means of the dynamical mean-field theory with an impurity solver of the continuous-time quantum Monte Carlo…

Strongly Correlated Electrons · Physics 2014-05-20 Aaram J. Kim , M. Y. Choi , Gun Sang Jeon

Moir\'e superlattices provide a powerful tool to engineer novel quantum phenomena in two-dimensional (2D) heterostructures, where the interactions between the atomically thin layers qualitatively change the electronic band structure of the…

Moir\'e superlattices formed in van der Waals bilayers have enabled the creation and manipulation of new quantum states, as is exemplified by the discovery of superconducting and correlated insulating states in twisted bilayer graphene near…

The additional layer degree of freedom in trilayer moir\'e superlattices of transition metal dichalcogenides enables the emergence of novel excitonic species, such as quadrupolar excitons, which exhibit unique excitonic interactions and…

The engineering of superlattices in two-dimensional van der Waals materials has enabled the realization of rich phase diagrams hosting topological and strongly correlated phases. While incommensurability is widespread in three-dimensional…

The use of intense tailored light fields is the perfect tool to achieve ultrafast control of electronic properties in quantum materials. Among them, Mott insulators are materials in which strong electron-electron interactions drive the…

Strongly Correlated Electrons · Physics 2023-02-07 Eduardo B. Molinero , Rui E. F. Silva

We determine numerically the ground state of the two-dimensional, fully polarized electron gas within the Hartree-Fock approximation without imposing any particular symmetries on the solutions. At low electronic densities, the Wigner…

Strongly Correlated Electrons · Physics 2014-03-04 B. Bernu , F. Delyon , M. Duneau , M. Holzmann

We investigate the metal insulator transitions at finite temperature for the Hubbard model with diagonal alloy disorder. We solve the dynamical mean field theory equations with the non crossing approximation and we use the coherent…

Strongly Correlated Electrons · Physics 2009-11-11 P. Lombardo , R. Hayn , G. I. Japaridze

Moir\'e transition metal dichalcogenide (TMD) systems provide a tunable platform for studying electron-correlation driven quantum phases. Such phases have so far been found at rational fillings of the moir\'e superlattice, and it is…

We investigate the physics of photonic band structures of the moir\'e patterns that emerged when overlapping two uni-dimensional (1D) photonic crystal slabs with mismatched periods. The band structure of our system is a result of the…

In the last few years, interest in monomolecular layers of transition metal dichalcogenides (TMDs) has been driven by their unusual electronic and optical properties, which are very attractive for designing functional elements of new…

Mesoscale and Nanoscale Physics · Physics 2021-12-08 P. L. Pekh , P. V. Ratnikov , A. P. Silin

Moir\'e materials have emerged as a rich platform for exploring strong correlation effects in low dimensions, with twisted bilayer graphene (TBG) as a paradigmatic example. To distill the essential ingredients driving moir\'e-induced…

Strongly Correlated Electrons · Physics 2026-03-19 Paban Kumar Patra , Ranjith R. Kumar , Yixuan Huang , Hridis K. Pal

The exploration of quantum phases in moir\'e systems has drawn intense experimental and theoretical efforts. The realization of honeycomb symmetry has been a recent focus. The combination of strong interaction and honeycomb symmetry can…

Strongly Correlated Electrons · Physics 2024-12-25 Yubo Yang , Miguel A. Morales , Shiwei Zhang

The recent observation of correlated phases in transition metal dichalcogenide moir\'e systems at integer and fractional filling promises new insight into metal-insulator transitions and the unusual states of matter that can emerge near…

Two dimensional materials and their heterostructures constitute a promising platform to study correlated electronic states as well as many body physics of excitons. Here, we present experiments that unite these hitherto separate efforts and…

Mesoscale and Nanoscale Physics · Physics 2020-05-12 Yuya Shimazaki , Ido Schwartz , Kenji Watanabe , Takashi Taniguchi , Martin Kroner , Ataç Imamoğlu

Moir\'{e} interference effects have profound impact on the optoelectronic properties of vertical van der Waals structures. Here we establish secondary electron imaging in a scanning electron microscope as a powerful technique for…

Mesoscale and Nanoscale Physics · Physics 2023-06-27 Anna Rupp , Jonas Göser , Zhijie Li , Ismail Bilgin , Anvar Baimuratov , Alexander Högele

Motivated by the recent experimental developments in van der Waals heterostructures, we investigate the emergent magnetism in Mott insulator - semimetal moir\'e superlattices by deriving effective spin models and exploring their phase…

Strongly Correlated Electrons · Physics 2024-11-05 M. A. Keskiner , Pouyan Ghaemi , M. Ö. Oktel , Onur Erten

Searching for controllable topological phase by means of external stimuli in two-dimensional (2D) material-based van der Waals (vdW) heterostructures is currently an active field for both the underlying physics and practical applications.…

Materials Science · Physics 2024-06-14 D. Q. Fang , D. W. Wang