English
Related papers

Related papers: Moir\'{e} effects in graphene--hBN heterostructure…

200 papers

In fractionally filled Landau levels there is only a small energy difference between broken translational symmetry electron-crystal states and exotic correlated quantum fluid states. We show that the spatially periodic substrate interaction…

Mesoscale and Nanoscale Physics · Physics 2016-08-03 Ashley M. DaSilva , Jeil Jung , Allan H. MacDonald

Recent progress in preparing well controlled 2D van der Waals heterojunctions has opened up a new frontier in materials physics. In this paper we address the intriguing energy gaps that are sometimes observed when a graphene sheet is placed…

Mesoscale and Nanoscale Physics · Physics 2015-02-23 Jeil Jung , Ashley DaSilva , Allan H. MacDonald , Shaffique Adam

The specific rotational alignment of two-dimensional lattices results in a moir\'e superlattice with a larger period than the original lattices and allows one to engineer the electronic band structure of such materials. So far, transport…

We investigate low energy excitons in rhombohedral pentalayer graphene encapsulated by hexagonal boron nitride (hBN/R5G/hBN), focusing on the regime at the experimental twist angle $\theta = 0.77^\circ$ and with an applied electric field.…

Mesoscale and Nanoscale Physics · Physics 2026-03-10 Henry Davenport , Frank Schindler , Johannes Knolle

Moir\'e superlattices in graphene supported on various substrates have opened a new avenue to engineer graphene's electronic properties. Yet, the exact crystallographic structure on which their band structure depends remains highly debated.…

Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work, we demonstrate the realization of high-quality graphene-hBN heterostructures entirely…

Graphene plasmons were predicted to possess ultra-strong field confinement and very low damping at the same time, enabling new classes of devices for deep subwavelength metamaterials, single-photon nonlinearities, extraordinarily strong…

Heterostructures of atomically-thin materials have attracted significant interest owing to their ability to host novel electronic properties fundamentally distinct from their constituent layers. In the case of graphene on boron nitride, the…

Many are the ways of engineering the band gap of nanoribbons including application of stress, electric field and functionalization of the edges. In this article, we investigate separately the effects of these methods on armchair graphene…

Mesoscale and Nanoscale Physics · Physics 2024-03-14 Elisa Serrano Richaud , Sylvain Latil , Hakim Amara , Lorenzo Sponza

We use first-principle density functional theory (DFT) to study the transport properties of single and double barrier heterostructures realized by stacking multilayer h-BN or BC$_{2}$N, and graphene films between graphite leads. The…

Mesoscale and Nanoscale Physics · Physics 2012-12-20 Samantha Bruzzone , Gianluca Fiori , Giuseppe Iannaccone

Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The primary challenge in modulating this gap has been the absence…

Monolayer of hexagonal boron nitride (h-BN), commonly known as "white graphene" is a promising wide bandgap semiconducting material for deep-ultaviolet optoelectronic devices. In this report, the light absorption of a single layer hexagonal…

Mesoscale and Nanoscale Physics · Physics 2011-09-26 Aniruddha Konar , Raj Jana , Tian Fang , Guowang Li , William O'Brien , Debdeep Jena

Chemical and structural diversity present in hexagonal boron nitride ((h-BN) and graphene hybrid nanostructures provide new avenues for tuning various properties for their technological applications. In this paper we investigate the…

Materials Science · Physics 2015-06-11 Alper Kinaci , Justin B. Haskins , Cem Sevik , Tahir Cagin

We report on the fabrication and measurement of a graphene tunnel junction using hexagonal-boron nitride as a tunnel barrier between graphene and a metal gate. The tunneling behavior into graphene is altered by the interactions with phonons…

Mesoscale and Nanoscale Physics · Physics 2015-05-30 F. Amet , J. R. Williams , A. G. F. Garcia , M. Yankowitz , K. Watanabe , T. Taniguchi , D. Goldhaber-Gordon

Van der Waals (vdW) heterostructures consisting of Bernal bilayer graphene (BLG) and hexagonal boron nitride (hBN) are investigated. By performing first-principles calculations we capture the essential BLG band structure features for…

Mesoscale and Nanoscale Physics · Physics 2023-09-27 Klaus Zollner , Eike Icking , Jaroslav Fabian

In twisted bilayer graphene (TBG) a moir\'e pattern forms that introduces a new length scale to the material. At the 'magic' twist angle of 1.1{\deg}, this causes a flat band to form, yielding emergent properties such as correlated…

Combining both vertical and in-plane two-dimensional (2D) heterostructures opens up the possibility to create an unprecedented architecture using 2D atomic layer building blocks. The thermal transport properties of such mixed…

Materials Science · Physics 2020-07-16 Ting Liang , Ping Zhang , Man Zhou , Peng Yuan , Daoguo Yang

We report on the observation of Coulomb drag between graphene-hexagonal boron nitride (hBN) moir\'{e} heterostructure with a moir\'{e} wavelength of $\sim$14 nm and an intrinsic graphene with a lattice constant of $\sim$0.25 nm. By tuning…

Mesoscale and Nanoscale Physics · Physics 2024-10-30 Yueyang Wang , Hongxia Xue , Xiong Wang , Kenji Watanabe , Takashi Taniguchi , Dong-Keun Ki

Hexagonal boron nitride ($\it h$-BN) exhibits dominant $\pi$-bands near the Fermi level, similar to graphene. However, unlike graphene, where tight-binding (TB) models accurately reproduce band edges near the $K$ and $K^{\prime}$ points in…

Materials Science · Physics 2024-09-04 Srivani Javvaji , Fengping Li , Jeil Jung

Twisted bilayer graphene (tBLG) forms a quasicrystal whose structural and electronic properties depend on the angle of rotation between its layers. Here we present a scanning tunneling microscopy study of gate-tunable tBLG devices supported…