Related papers: Variability Analysis in a 3-D Multi-Granular Hf$_x…
Extra components in series to non-ferroelectric capacitance can cause apparent ferroelectric D-E hysteresis loops even with the double-wave method (DWM). Characteristics of fake loops are studied withsimple circuit models, and suspicious…
Two-dimensional (2D) van der Waals ferroelectrics are recognized for enabling many applications, from memory and logic to neuromorphic computing, as well as transforming other materials to control electronic phase transitions and…
We present a multiscale modelling framework that integrates density functional theory (DFT) with a phase-field model (PFM) to explore the intricate dynamics of grain growth in nanocrystalline {\alpha}-Fe single-phase alloy in the presence…
Ferroelectrics are essential in low-dimensional memory devices for multi-bit storage and high-density integration. A polar structure is a necessary premise for ferroelectricity, mainly existing in compounds. However, it is usually rare in…
Charge transport across the interfaces in complex oxides attracts a lot of attention because it allows creating novel functionalities useful for device applications. In particular, it has been observed that movable domain walls in epitaxial…
We report an electric-field poling study of the geometric-driven improper ferroelectric h-ErMnO$_3$. From a detailed dielectric analysis we deduce the temperature and frequency dependent range for which single-crystalline h-ErMnO$_3$…
Granular systems are not always homogeneous and can be composed of grains with very different mechanical properties. To improve our understanding of the behavior of real granular systems, in this experimental study, we compress 2D…
The discovery of two-dimensional (2D) ferroelectrics with switchable out-of-plane polarization such as monolayer $\alpha$-In$_2$Se$_3$ offers a new avenue for ultrathin high-density ferroelectric-based nanoelectronics such as ferroelectric…
Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes (FeDs) are two-terminal NVM devices exhibiting rectifying…
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a…
This work presents a high-order Arbitrary-Lagrangian-Eulerian (ALE) Discontinuous Galerkin framework for simulating multi-body Vortex-Induced Vibrations. The ALE formulation extends a Runge-Kutta Interior-Penalty nodal DG solver with…
Polyvinylidene difluoride (PVDF) is a ferroelectric polymer characterized by negative strain along the direction of the applied electric field. However, the electromechanical response mechanism of PVDF remains unclear due to the complexity…
Four different finite element level-set (FE-LS) formulations are compared for the modeling of grain growth in the context of polycrystalline structures and, moreover, two of them are presented for the first time using anisotropic grain…
Ferroelectric domain nucleation and growth in multiferroic BiFeO3 films is observed directly by applying a local electric field with a conductive tip inside a scanning transmission electron microscope. The nucleation and growth of a…
Fluorite-type $\mathrm{HfO_2}$-based ferroelectric (FE) oxides have rekindled interest in FE memories due to their compatibility with silicon processing and potential for high-density integration. The polarization characteristics of FE…
Understanding various aspects of ferroelectricity in hafnia-based nanomaterials is of vital importance for the development of future non-volatile memory and logic devices. Here, the unconventional and weak electromechanical response of…
The ground-state structural and electronic properties of ferroelectric BiFeO$_3$ are calculated using density functional theory within the local spin-density approximation and the LSDA+U method. The crystal structure is computed to be…
Variability in memristive devices based on h-BN dielectrics is studied in depth. Different numerical techniques to extract the reset voltage are described and the corresponding cycle-to-cycle variability is characterized by means of the…
Based on a microscopic model of nonequilibrium carrier generation in a leaky dielectric, we analytically derive hysteresis loops for the dielectric response of non-polar, non-ferroelectric materials. We demonstrate how complex dielectric…
We study coupling between the ferroelectric polarization and magnetization of granular ferromagnetic film using a phenomenological model of combined multiferroic system consisting of granular ferromagnetic film placed above the…