Related papers: Wafer-Scale Epitaxial Modulation of Quantum Dot De…
The integration of epitaxial barium titanate (BTO) on silicon represents a highly promising pathway for next-generation, energy-efficient photonic integrated circuits due to BTO's exceptionally high Pockels coefficients. However, the…
In this paper, the quasi-constant modulus (QCM) property is analyzed and leveraged in the design of nonlinearity-tolerant four-dimensional (4D) modulation formats. Accordingly, we propose a family of QCM-based quadrature amplitude…
Quantum droplets (QDs), formed by ultradilute quantum fluids under the action of the Lee-Huang-Yang (LHY) effect, provide a unique platform for investigating a wide range of macroscopic quantum effects. Recent studies of QDs' breathing…
Infrared spectroscopy currently requires the use of bulky, expensive, and/or fragile spectrometers. For gas sensing, environmental monitoring, or other applications in the field, an inexpensive, compact, robust on-chip spectrometer is…
The Pd, and Pt based ABO2 delafossites are a unique class of layered, triangular oxides with 2D electronic structure and a large conductivity that rivals the noble metals. Here, we report successful growth of the metallic delafossite PdCoO2…
Realizing solution processed quantum dot (QD) lasers is one of the holy-grails of nanoscience. The reason that QD lasers are not yet commercialized is that the lasing threshold is too high: one needs > 1 exciton per QD, which is hard to…
We report a significant advancement in ultra low power light-by-light phase modulation using open semiconductor microcavities in the strong light-matter coupling regime. We achieve cross-phase modulation of up to 247$\pm$17 mrad per…
We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is…
Molecular beam epitaxy (MBE) is a state-of-the-art technique for depositing thin films with precise stoichiometric control. However, when depositing oxides of perovskite-type ABO3, this process becomes challenging as controlling the flux…
The ability to generate quantum light at room temperature on a mature semiconductor platform opens up new possibilities for quantum technologies. Heteroepitaxial growth of gallium nitride on silicon substrates offers the opportunity to…
A full three-dimensional model for the calculation of the electronic structure of semiconductor quantum dots (QD) and molecules (QDM) grown on high index surfaces and/or in the presence of an external magnetic field is presented. The strain…
We investigate plasmonic modulators with a gain material to be implemented as ultra-compact and ultra-fast active nanodevices in photonic integrated circuits. We analyze metal-semiconductor-metal (MSM) waveguides with InGaAsP-based active…
Advances in nanotechnology provide techniques for the realisation of integrated quantum-optical circuits for on-chip quantum information processing(QIP). The indistinguishable single photons, required for such devices can be generated by…
We theoretically investigate the interaction of a single quantum dipole with the modes of a fiber-coupled semiconductor waveguide. Through a combination of tight modal confinement and phase-matched evanescent coupling, we predict that…
Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a…
Finding strategies to preserve quantum resources in open systems is nowadays a main requirement for reliable quantum-enhanced technologies. We address this issue by considering structured cavities embedding qubits driven by a control…
Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast…
A three-step process was developed for growing high-quality, optically uniform WSe2 monolayers by molecular beam epitaxy (MBE) with advantage of using hexagonal boron nitride (hBN). The process was optimized to maximize the efficiency of…
The electronic properties of thin metallic films deviate from the corresponding bulk ones when the film thickness is comparable with the wavelength of the electrons at the Fermi level due to quantum size effects (QSE). QSE are expected to…
Coherent control of ultrafast quantum phenomena benefits from pulse-shaping capabilities allowing to modulate the envelope and instantaneous phase of optical fields on femtosecond time scales. While such control is available for optical…